Zobrazeno 1 - 10
of 40
pro vyhledávání: '"T. G. Yugova"'
Autor:
T. G. Yugova, V. A. Chuprakov, N. A. Sanzharovsky, A. A. Yugov, I. D. Martynov, S. N. Knyazev
Publikováno v:
Crystallography Reports. 67:1099-1104
Publikováno v:
Crystallography Reports. 67:323-326
Comparison between optical and electrophysical data on free electron concentration in n-InAs samples
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 24:153-161
A theoretical model has been developed for determining free electron concentration in n-InAs from characteristic points in far infrared region of reflection spectra. We show that when determining free electron concentration one should take into accou
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 24:27-33
A theoretical model has been developed that allows one to determine free electron density in n-GaAs from the characteristic points on far-infrared reflection spectra. It was shown that, in this case, it is necessary to take into account the plasmon-p
Publikováno v:
Crystallography Reports. 66:931-933
Publikováno v:
Crystallography Reports. 65:832-835
The structural features induced by twinning in tin- and tellurium-doped gallium arsenide crystals during their growth by the Czochralski method with liquid melt sealing by boric anhydride have been considered. It is shown that growth twins and edge f
Publikováno v:
Crystallography Reports. 62:275-278
The influence of the deviation of seed orientation from the [100] direction on the formation of a dislocation structure of gallium arsenide single crystals grown by the Czochralski method has been revealed. The intensive multiplication of dislocation
Publikováno v:
Crystallography Reports. 61:428-431
The composition nonstoichiometry and structural quality of undoped gallium nitride layers grown by the hydride vapor phase epitaxy on sapphire substrates of different orientations have been estimated using Raman spectroscopy. It is found for the firs
Autor:
M. P. Dukhnovsky, P. A. Averichkin, T. G. Yugova, Yu. P. Kozlova, S. N. Knyazev, I. A. Belogorokhov, A. A. Donskov
Publikováno v:
Semiconductors. 50:555-558
The results of using carbidsiliconoxide (a-C:SiO1.5) films with a thickness of 30–60 nm, produced by the pyrolysis annealing of oligomethylsilseskvioksana (CH3–SiO1.5)n with cyclolinear (staircased) molecular structure, as intermediate films in t
Autor:
A. A. Yugov, S. N. Knyazev, Yu. P. Kozlova, M. P. Duhnovskii, S. S. Malahov, T. G. Yugova, I. A. Belogorokhov, A. A. Donskov
Publikováno v:
Semiconductors. 50:411-414
The effect of the type of substrate, sapphire substrate (c- and r-orientation) or GaN/Al2O3 template (c- and r-orientations), on the nitridation of an amorphous titanium nanolayer is shown. The effect of the titanium-nanolayer thickness on thick GaN