Zobrazeno 1 - 7
of 7
pro vyhledávání: '"T. G. Kolesnikova"'
Autor:
T. V. Yalyalieva, T. G. Kolesnikova
Publikováno v:
Путеводитель предпринимателя, Vol 0, Iss 23, Pp 345-352 (2020)
To improve performance under competition, organizations focus on actual production requirements and effective consumer demand. Economic reforms have greatly improved competitive relations on the Russian market. The article attempts to analyze efficie
Externí odkaz:
https://doaj.org/article/ba4fde0dffee4c7c88d96b0368e25a9a
Publikováno v:
Открытое образование (Москва), Vol 0, Iss 6, Pp 18-26 (2016)
Information base of research consists of informational and methodological support (model of pedagogical measuring materials and evaluation model, bank of tasks and the results of their implementation during the period 2014–2016) in the field of stu
Externí odkaz:
https://doaj.org/article/0430a98905b54f82b5a01e45973892b9
Autor:
A. P. Korovin, T. G. Kolesnikova, M. S. Andreev, T. S. Kitichenko, L. E. Velikovskii, V. G. Mokerov, S. N. Yakunin
Publikováno v:
Journal of Communications Technology and Electronics. 52:819-825
Structural and electrophysical properties of heteroepitaxial gallium nitride layers on a sapphire substrate that are grown via the molecular beam epitaxy (MBE) method are studied. The parameters of deep-level trapping centers are determined by the me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc736e295321137254f1cf4648438a92
https://doi.org/10.1134/s1064226907070157
https://doi.org/10.1134/s1064226907070157
Autor:
V. N. Peregudov, S. N. Yakunin, E. M. Pashaev, A. A. Zaitsev, T. G. Kolesnikova, Zs. J. Horváth
Publikováno v:
physica status solidi (c). :897-901
The effect of X-ray radiation from a standard X-ray tube on the structural imperfection and electrical properties of CdZnTe solid solutions was studied by precision X-ray diffraction analysis and the method of thermally stimulated capacitor discharge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d016ebef775f76d240b0643584525ea
https://doi.org/10.1002/pssc.200306235
https://doi.org/10.1002/pssc.200306235
Autor:
V. N. Peregudov, A. P. Korovin, T. G. Kolesnikova, E. M. Pashaev, S. N. Yakunin, A. A. Zaitsev
Publikováno v:
Russian Microelectronics. 31:271-276
Changes in the structure and electrical properties of Cd1–xZnxTe real crystals due to x-irradiation with powers commonly used in x-ray crystallography are studied experimentally. The structure is examined by high-resolution x-ray diffraction, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::728ebbaa25839c54f4e62f90a1ee45aa
https://doi.org/10.1023/a:1020289506795
https://doi.org/10.1023/a:1020289506795
Publikováno v:
Russian Microelectronics. 30:111-117
The parameters of deep traps in ZnCdTe(Cl) solid solutions were found with the method of thermally stimulated capacitor discharge (TCD). It was shown that the vapor-grown single crystals have a rather low concentration of deep traps, which influence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7589494a495f07ed6a570268d47f15e6
https://doi.org/10.1023/a:1009485911843
https://doi.org/10.1023/a:1009485911843
Autor:
M. V. Shiryaeva, A. P. Korovin, T. G. Kolesnikova, A. S. Adonin, A. V. Bespalov, T. S. Kitichenko
Publikováno v:
Russian Microelectronics. 29:246-260
SOS structures with 0.1-and 0.3-μm-thick silicon layers were investigated with the method of thermally stimulated capacitor discharge. The effect of temperature, time, and several external factors on the parameters of deep traps in heteroepitaxial S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e38acd965221e926d8448a694798717
https://doi.org/10.1007/bf02773273
https://doi.org/10.1007/bf02773273