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pro vyhledávání: '"T. Görög"'
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Publikováno v:
Journal of Crystal Growth. 234:184-189
In the frame of a research project aimed at obtaining high-resistivity CdTe crystals, the authors report on the preparation of (nominally) undoped semi-insulating (SI) CdTe crystals. The method is based on the use of polycrystalline CdTe charges synt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6e36b318b50c87b78a22edcb9fe625
https://doi.org/10.1016/s0022-0248(01)01670-0
https://doi.org/10.1016/s0022-0248(01)01670-0
Publikováno v:
Journal of Crystal Growth. :14-18
In the frame of a research project aimed at preparing high-resistivity CdTe single crystals, the authors have developed as a first step, a new, low cost, fast technique which allows to synthesize from the elements polycrystalline CdTe with very low s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d950fb7785cde330087e74b07150114f
https://doi.org/10.1016/s0022-0248(00)00042-7
https://doi.org/10.1016/s0022-0248(00)00042-7
Publikováno v:
Materials Science Forum. 203:7-12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2703435fa811612a9a87f0982b2725b4
https://doi.org/10.4028/www.scientific.net/msf.203.7
https://doi.org/10.4028/www.scientific.net/msf.203.7
Publikováno v:
Materials Science and Engineering: B. 28:488-492
InP surfaces, with (100), (111)In and (111)P orientations were etched with HBr-K2Cr2O7-H2O (BCA) solutions. Etching could be diffusion controlled (giving rise to polishing) or purely kinetically controlled (revealing crystallographic defects), depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e4473d20e3a4a0c20aa7d59c3fd08b6
https://doi.org/10.1016/0921-5107(94)90112-0
https://doi.org/10.1016/0921-5107(94)90112-0
Publikováno v:
Journal of Crystal Growth. 141:57-67
InP surfaces with (100), (111)In and (111)P orientations were etched with HBr-K 2 Cr 2 O 2 -H 2 O solutions. Etching could be diffusion-controlled (giving rise to polishing) or purely kinetically controlled (revealing crystallographic defects), depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24c804de1097c0701d7b411ef8576fe9
https://doi.org/10.1016/0022-0248(94)90092-2
https://doi.org/10.1016/0022-0248(94)90092-2
Publikováno v:
Journal of Applied Physics. 75:2406-2409
The phosphorus pressure in equilibrium with solid InP heated at temperatures of up to 980 °C was measured using a new‐concept apparatus appositely designed and manufactured. With this apparatus, all the difficulties inherent to handling of phospho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8880021b365b11bbc544d2043b4c5c17
https://doi.org/10.1063/1.356980
https://doi.org/10.1063/1.356980
Publikováno v:
Acta Physica Hungarica. 70:231-236
From the technological point of view the main task is to achieve a regular shape, good crystallographical and electrical parameters in the crystal growth process. The GaAs single crystals grown by the technology of Liquid Encapsulated Czochralski (LE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b1a8c513c383f6451435316c116d3b9
https://doi.org/10.1007/bf03156270
https://doi.org/10.1007/bf03156270
Publikováno v:
Scopus-Elsevier
A study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The electrical characterisation showed that after the diffusion annealing the wafers became semi-insulating, with resistivities generally above 10/sup 8/ /spl Omega/ cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23520e66af11e1ad5950d4be40befa9d
https://doi.org/10.1109/iciprm.1999.773684
https://doi.org/10.1109/iciprm.1999.773684
Publikováno v:
Acta Physica Hungarica. 61:149-152
Multilayer LPE of GaAs and GaAlAs using a vertical system with rotary graphite crucible has been developed. Using this equipment superlattice structures in the GaAs-GaAlAs system were grown. The layer thicknesses were varied from 20 to 500 nm. Struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5bf3bd323906d71cb51d15d5f2f3a2f
https://doi.org/10.1007/bf03155878
https://doi.org/10.1007/bf03155878