Zobrazeno 1 - 10
of 37
pro vyhledávání: '"T. Frigge"'
Publikováno v:
Structural Dynamics, Vol 5, Iss 2, Pp 025101-025101-7 (2018)
The photoinduced structural dynamics of the atomic wire system on the Si(111)-In surface has been studied by ultrafast electron diffraction in reflection geometry. Upon intense fs-laser excitation, this system can be driven in around 1 ps from the in
Externí odkaz:
https://doaj.org/article/089e0b40d6ea4a37bae46a97f2295c7c
Publikováno v:
Structural Dynamics, Vol 2, Iss 3, Pp 035101-035101-10 (2015)
Ultrafast high energy electron diffraction in reflection geometry is employed to study the structural dynamics of self-organized Germanium hut-, dome-, and relaxed clusters on Si(001) upon femtosecond laser excitation. Utilizing the difference in siz
Externí odkaz:
https://doaj.org/article/2511a7ce6ce94beeb9213e5ebda050b8
Publikováno v:
Structural Dynamics
Structural Dynamics, Vol 5, Iss 2, Pp 025101-025101-7 (2018)
Structural Dynamics, Vol 5, Iss 2, Pp 025101-025101-7 (2018)
The photoinduced structural dynamics of the atomic wire system on the Si(111)-In surface has been studied by ultrafast electron diffraction in reflection geometry. Upon intense fs-laser excitation, this system can be driven in around 1 ps from the in
We studied the phononic heat transport from ultrathin epitaxial Pb(111) films across the heterointerface into a Si(111) substrate by means of ultrafast electron diffraction. The thickness of the Pb films was varied from 15 to 4 monolayers. It was fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85145c0f3986badcbde8a77dbc8b07d8
Autor:
Wolf Gero Schmidt, B. Hafke, B. Krenzer, V. Mikšić Trontl, T. Frigge, Uwe Bovensiepen, M. Horn-von Hoegen, Andreas Lücke, Uwe Gerstmann, C. Streubühr, D. von der Linde, Ping Zhou, Manuel Ligges, T. Witte, Stefan Martin Wippermann, I. Avigo, A. Samad Syed, Simone Sanna
Transient control over the atomic potential- energy landscapes of solids could lead to new states of matter and to quantum control of nuclear motion on the timescale of lattice vibrations. Recently developed ultrafast time- resolved diffraction techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f59169e4a38b9030fde703ad625287f
https://doi.org/10.1038/nature21432
https://doi.org/10.1038/nature21432
Autor:
Simone Wall, M. Horn-von Hoegen, B. Krenzer, Martin Kammler, F. Klasing, T. Frigge, A. Janzen, A. Hanisch-Blicharski, A. Kalus
Publikováno v:
Ultramicroscopy. 127:2-8
Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe scheme. Refl
Autor:
T. Frigge, Steve Erwin, J. Schäfer, Ralph Claessen, B. Hafke, B. Krenzer, J. Aulbach, T. Witte, M. Horn-von Hoegen
Publikováno v:
Physical Review B. 94
Adsorption of Au on Si(553) results in the self-assembly of highly ordered step arrays of one-dimensional (1D) Au atomic wires along the step direction. Charge transfer from the terrace to the step edge causes every third Si atom at the step edge to
Publikováno v:
Journal of Materials Research. 27:2718-2723
In spite of its large lattice mismatch, Bi grows epitaxially in (111) orientation and almost free of defects on Si substrates. On Si(111), the Bi film is under compressive strain of less than 2% and shows a 6-7 registry to the Si(111)-(7 × 7) substr
Publikováno v:
Structural Dynamics
Structural Dynamics, Vol 2, Iss 3, Pp 035101-035101-10 (2015)
Structural Dynamics, Vol 2, Iss 3, Pp 035101-035101-10 (2015)
Ultrafast high energy electron diffraction in reflection geometry is employed to study the structural dynamics of self-organized Germanium hut-, dome-, and relaxed clusters on Si(001) upon femtosecond laser excitation. Utilizing the difference in siz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2366dd6e768bf1d7e11107a10c3c7ace
Autor:
T. Frigge, Simone Wall, F. Klasing, B. Krenzer, B. Hafke, M. Horn-von Hoegen, A. Hanisch-Blicharski
Publikováno v:
Physical Review B. 89
Indium on silicon (111) exhibits a Peierls-like phase transition from a $(4\ifmmode\times\else\texttimes\fi{}1)$ reconstructed high-temperature phase to a $(8\ifmmode\times\else\texttimes\fi{}2)$ reconstructed ground state. A controversial debate is