Zobrazeno 1 - 10
of 42
pro vyhledávání: '"T. Feltgen"'
Publikováno v:
physica status solidi (a). 195:81-86
The long-term stability of AlGaAs/GaAs and InAlAs/InGaAs high electron mobility transistors (HEMTs), tested under high drain voltage and/or high temperature operation is reported. HEMTs with high In content in the active channel, alternatively fabric
Autor:
K. S. Gavrichev, J.H. Greenberg, V. N. Guskov, Michael Fiederle, T. Feltgen, Klaus-Werner Benz
Publikováno v:
The Journal of Chemical Thermodynamics. 34:2041-2047
The heat capacity of ZnTe was measured in an adiabatic calorimeter in the temperature range from 15 K to 330 K. The following standard thermodynamic properties of ZnTe were derived: C p, m ° (298.15 K )=(49.52±0.10) J · K −1 · mol −1 ; S ° m
Autor:
A.S. Alikhanyan, V. N. Guskov, J.H. Greenberg, Michael Fiederle, T. Feltgen, Klaus-Werner Benz, A.M. Natarovsky
Publikováno v:
physica status solidi (b). 229:137-140
P-T-X data are the thermodynamic basis for modeling the crystal growth of materials with controlled stoichiometry. In this paper results of the first direct experimental measurement of the total vapor pressure are reported for three-phase equilibria
Autor:
V. N. Guskov, K. S. Gavrichev, J.H. Greenberg, G. A. Sharpataya, T. Feltgen, Michael Fiederle, Klaus-Werner Benz
Publikováno v:
Thermochimica Acta. 381:133-138
High-temperature heat capacities were measured using the Setaram DSC 111 in the temperature range 290–925 K. Experimental data were smoothed jointly with earlier determined low-temperature heat capacities to calculate thermodynamic properties in te
Publikováno v:
International Journal of Inorganic Materials. 3:1241-1244
Synchrotron topography characterization of vapor grown ZnTe crystals showed that the available data in this system are not sufficient to control the growth parameters. First P–T–X phase equilibrium studies confirm that the stoichiometric plane X=
Autor:
Michael Fiederle, J. L. Castaño, V. Babentsov, Victoria Corregidor, T. Feltgen, Ernesto Diéguez, Klaus-Werner Benz
Publikováno v:
Crystal Research and Technology. 36:535-542
Semi-insulating CdTe single crystals doped with Ga were grown from the vapour phase by the modified Markov technique MMT. The study of the resistivity map in the cross-sections cut along the growth direction has been performed. The compensation pheno
Autor:
Ernesto Diéguez, Michael Fiederle, Victoria Corregidor, V. Babentsov, Klaus-Werner Benz, T. Feltgen
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 458:85-89
This paper presents data on experimentally and theoretically deduced total energies and energy level positions in the band-gap for eight elementary defects in CdTe. Based on these data, the total energy dependence on the Fermi-level position in the b
Autor:
Michael Fiederle, J. Meinhardt, T. Feltgen, M. Rogalla, J. Ludwig, K. Runge, Klaus-Werner Benz
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 434:152-157
The growth of CdTe from the vapour phase offers several improvements in crystal quality and homogeneity. CdTe and (Cd, Zn)Te were grown by the modified Markov technique. The transport properties and the detector performance are given and compared to
Publikováno v:
Journal of Crystal Growth. 197:635-640
CdTe and (Cd,Zn)Te crystals were compared by their material properties. The compensation mechanism of (Cd,Zn)Te and the influence of deep levels are compared to CdTe. The detector grade of (Cd,Zn)Te is obtained with a peak-to-valley ratio of 3.5 for
Autor:
G. Weimann, Hermann Massler, Stefan Müller, Rudolf Kiefer, Axel Tessmann, F. van Raay, B. Raynor, Michael Mikulla, Klaus Köhler, T. Feltgen, Rudiger Quay, S. Ramberger, J. Schleife
The suitability of AlGaN/GaN HEMTs on SiC is discussed with respect to mm-wave applications at 40 GHz and beyond. A 0.15 μm T-gate AlGaN/GaN-HEMT 2-inch technology on SiC and sapphire was developed for high power applications and for frequencies bey
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd652585673e13636fc1fca3f6f72a2e
https://publica.fraunhofer.de/handle/publica/204774
https://publica.fraunhofer.de/handle/publica/204774