Zobrazeno 1 - 10
of 25
pro vyhledávání: '"T. F. Kuech"'
Publikováno v:
APL Materials, Vol 3, Iss 3, Pp 036108-036108-8 (2015)
A set of GaAs1−xBix/GaAs multilayer quantum-well structures was deposited by metal-organic vapor phase epitaxy at 390 °C and 420 °C. The precursor fluxes were introduced with the intent of growing discrete and compositionally uniform GaAs1−xBix
Externí odkaz:
https://doaj.org/article/676e9be41cf545a4b7a9f594c5e5ee49
Autor:
H, Kim, B, Shi, Z, Lingley, Q, Li, A, Rajeev, M, Brodie, K M, Lau, T F, Kuech, Y, Sin, L J, Mawst
Publikováno v:
Optics express. 27(23)
We report the characteristics of the strained In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::604bf8cc0d405d6ee814898a34bb291e
https://pubmed.ncbi.nlm.nih.gov/31878394
https://pubmed.ncbi.nlm.nih.gov/31878394
Autor:
Adam W, Wood, Weixin, Chen, Honghyuk, Kim, Yingxin, Guan, K, Forghani, A, Anand, T F, Kuech, L J, Mawst, S E, Babcock
Publikováno v:
Nanotechnology. 28(21)
The effects of a 45 min anneal at 800 °C on the physical properties and microstructure of a five-period GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3d75dd1ebf52ee27c5742d31b5e7ce70
https://pubmed.ncbi.nlm.nih.gov/28471752
https://pubmed.ncbi.nlm.nih.gov/28471752
Autor:
K. Forghani, Y. Guan, G. Luo, M. Losurdo, A. Wood, S. Babcock, L. Mawst, D. Morgan, A. S. Brown, T. F. Kuech
Publikováno v:
The 5th International Workshop on Bismuth-Containing Semiconductors, Cork, Ireland, July 20-23, 2014
info:cnr-pdr/source/autori:K. Forghani, Y. Guan, G. Luo, M. Losurdo, A. Wood, S. Babcock, L. Mawst, D. Morgan, A. S. Brown, T. F. Kuech/congresso_nome:The 5th International Workshop on Bismuth-Containing Semiconductors/congresso_luogo:Cork, Ireland/congresso_data:July 20-23, 2014/anno:2014/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:K. Forghani, Y. Guan, G. Luo, M. Losurdo, A. Wood, S. Babcock, L. Mawst, D. Morgan, A. S. Brown, T. F. Kuech/congresso_nome:The 5th International Workshop on Bismuth-Containing Semiconductors/congresso_luogo:Cork, Ireland/congresso_data:July 20-23, 2014/anno:2014/pagina_da:/pagina_a:/intervallo_pagine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::db0287fd4768dc47a84c579bebe0773f
http://www.cnr.it/prodotto/i/300522
http://www.cnr.it/prodotto/i/300522
Autor:
D. Botez, G. Tsvid, M. D'Souza, J. C. Shin, Z. Liu, J. H. Park, J. Kirch, L. J. Mawst, M. Rathi, T. F. Kuech, I. Vurgaftman, J. Meyer, J. Plant, G. Turner, P. Zory
Publikováno v:
Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy
This chapter contains sections titled: Introduction Suppression of carrier leakage in QC lasers: The deep-well concept IQB lasers Active-photonic-crystal (APC) structures: Scaling to 1 W coherent power The potential of IQB lasers Fabrication of IQB d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b71d4bf1dcb5e2f112b2c202f0e8dc09
https://doi.org/10.1002/9780470649343.ch4
https://doi.org/10.1002/9780470649343.ch4
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88ef621faafc74802a4ad6e7cc45b330
https://doi.org/10.7567/ssdm.1999.c-3-4
https://doi.org/10.7567/ssdm.1999.c-3-4
Publikováno v:
MRS Proceedings. 537
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the 1540 nm 4I13/2 ← 4I15/2 emission of Er3+ in in situ Er-doped and Er-implanted GaN grown by hydride vapor phase epitaxy (HVPE). The PL and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d9b3e5adef5c2c1b1038466b9bb475
https://doi.org/10.1557/proc-537-g11.4
https://doi.org/10.1557/proc-537-g11.4
Publikováno v:
MRS Proceedings. 484
Oxygen related defects in Al-containing semiconductors have been determined to degrade luminescence efficiency and reduce free carrier lifetime, affecting the performance of light emitting diodes and laser diodes. We have used the oxygen doping sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f98a631a572efdb4043098726746656f
https://doi.org/10.1557/proc-484-611
https://doi.org/10.1557/proc-484-611
Autor:
Jutong Liu, T. F. Kuech
Publikováno v:
MRS Proceedings. 406
We have achieved spatially resolved room temperature photoluminescence (PL) from MOVPE GaAs (001) surfaces by Near-Field Scanning Optical Microscopy (NSOM). The PL intensity variation was related to the change of surface state density. Using this tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8fcea120f7fdb4a31a1dc7c16f686b
https://doi.org/10.1557/proc-406-523
https://doi.org/10.1557/proc-406-523
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:71
The surface preparation of GaSb(100), based on HCl solutions, was studied by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The chemical and structural analysis by XPS and AFM indicates that the GaSb surface treated by HCl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff26431a564b7b4b19389d6fbd0c8d89
https://doi.org/10.1116/1.1532023
https://doi.org/10.1116/1.1532023