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A plain man's guide to delta-doped semiconductors

Autor: T. E. Whall

Publikováno v: Contemporary Physics. 33:369-381

Ultra-thin doping layers of ≤ 1 nm in width may now be incorporated into semiconductors, to form two-dimensional disordered systems. The low-temperature electrical properties and some device applications of these so-called delta layers are discusse

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ecd190e16eb9d8da8b051521fccc563e
https://doi.org/10.1080/00107519208211064

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Maximum entropy mobility spectrum analysis for magnetotransport characterization of semiconductor multilayer structures

Autor: S. Kiatgamolchai, E. H. C. Parker, V. G. Kantser, O.A. Mironov, T. E. Whall, Maksym Myronov

Publikováno v: Proceedings. International Semiconductor Conference.

The maximum entropy mobility spectrum analysis (ME-MSA) method has been developed on the basis of a maximum entropy (ME) principle. It allows one to calculate a smooth electrical conductivity versus mobility plot ("mobility spectrum") from the classi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96678aea5d87b42ef7f08eda2e8791b2
https://doi.org/10.1109/smicnd.2002.1105881

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