Zobrazeno 1 - 10
of 37
pro vyhledávání: '"T. E. Svechnikova"'
Publikováno v:
Semiconductors. 46:1256-1262
The transport coefficients (the Nernst-Ettingshausen coefficient Q123, electrical conductivity σ11, thermal conductivity κii, the Seebeck coefficients S11 and S33, and the Hall coefficient R213) in samples of layered compounds of the homologous ser
Autor:
T. E. Svechnikova, L. E. Shelimova, S. A. Nemov, M. K. Zhitinskaya, N. S. Dema, N. M. Blagih, V. I. Proshin
Publikováno v:
Semiconductors. 46:447-451
In anisotropic PbSb2Te4 and PbSb2Te4:Cu single crystals, nine main independent components of the Hall, electrical-conductivity, thermopower, and Nernst-Ettingshausen effects and their anisotropy in the range 77–450 K have been studied. PbSb2Te4 sin
Publikováno v:
Inorganic Materials. 47:1314-1318
n-Bi2Te2.7Se0.3〈I〉 single crystals additionally doped with indium (0.1–2.0 mol % In2Te3) have been grown by Czochralski pulling through a floating crucible. As the In2Te3 content of the growth charge increases to 0.2 mol %, the thermoelectric f
Publikováno v:
Semiconductors. 45:988-992
In (Bi1.9Sb0.1)1 − x Sn x Te3 solid solution with different contents of Sn, the electrical conductivity (σ11) and the Hall (R 123 and R 321), Seebeck (S 11 and S 33), and Nernst-Ettingshausen (Q 123 and Q 321) coefficients have been measured. It i
Autor:
L. E. Shelimova, M. K. Zhitinskaya, P. P. Konstantinov, A. A. Muhtarova, T. E. Svechnikova, Sergey A. Nemov
Publikováno v:
Semiconductors. 44:729-733
The kinetic coefficients of high-quality single crystals of ternary layered n-PbBi4Te7 compounds have been measured in the temperature range of 77–400 K. These crystals, doped with electroactive Cd and Ag impurities, were grown by Czochralski pulli
Autor:
L. E. Shelimova, I. Yu. Nikhezina, T. E. Svechnikova, E. S. Avilov, M. A. Kretova, O. G. Karpinskii, V. S. Zemskov
Publikováno v:
Inorganic Materials. 44:371-376
We have studied the effects of doping and excess Te on the thermoelectric properties of single crystals of the layered ternary compounds PbBi4Te7 and PbSb2Te4. X-ray diffraction characterization has shown that the crystals have highly disordered stru
Autor:
Yu. V. Granatkina, L. I. Petrova, V. S. Zemskov, T. E. Svechnikova, L. D. Ivanova, M. A. Korzhuev
Publikováno v:
Inorganic Materials. 43:1291-1296
We have optimized the compositions of p-and n-type graded thermoelectric materials based on solid solutions between bismuth and antimony chalcogenides with high thermoelectric efficiency in the temperature range 100–400 K. Czochralski-grown graded
Publikováno v:
Semiconductors. 41:1140-1144
In single crystals of copper-doped and undoped Bi2Te2.85Se0.15 solid solutions with an electron concentration close to 1 × 1019 cm−3, the temperature dependences are investigated for the Hall (R 123, R 321) and Seebeck (S 11) kinetic coefficients,
Publikováno v:
Semiconductors. 41:786-789
The optical properties of bismuth telluride crystals doped with donor-and acceptor-type impurities are studied. The fact that energy corresponding to the resonance frequency of plasma oscillations of free charge carriers (plasmons) approaches the ban
Publikováno v:
Semiconductors. 41:546-549
The magnetic-field dependences of the Hall coefficient and transverse magnetoresistance are studied experimentally and theoretically in p-Bi2Te3 crystals doped heavily with Sn and grown by the Czochralski method in the case of both classical and quan