Zobrazeno 1 - 10
of 23
pro vyhledávání: '"T. E. Smolyarova"'
Autor:
I. V. Podshivalov, A. A. Karacharov, Ivan V. Nemtsev, I. V. Govorun, Yuri V. Fadeev, A. V. Lukyanenko, M. M. Simunin, S. V. Khartov, A. S. Voronin, T. E. Smolyarova, D. V. Karpova, I. A. Tambasov
Publikováno v:
Journal of Materials Science. 56:14741-14762
Nowadays, the technical advances call for efficient electromagnetic interference (EMI) shielding of transparent devices which may be subject to data theft. We developed Cu–Ag and Ni–Ag meshes on flexible PET substrate for highly efficiency transp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c9718eea0e8c1de7d277d89b44b4fd
https://doi.org/10.1007/s10853-021-06206-4
https://doi.org/10.1007/s10853-021-06206-4
Autor:
A. S. Aleksandrovskii, Mikhail N. Volochaev, G. N. Bondarenko, N. P. Evsevskaya, A. S. Voronin, T. E. Smolyarova, A. N. Masyugin, Ivan V. Nemtsev, S. A. Lyashchenko, Ekaterina V. Tambasova, I. A. Tambasov
Publikováno v:
Physics of the Solid State. 61:1904-1909
Aluminum-doped zinc oxide thin films have been grown by atomic layer deposition at a temperature of 200°C. Using X-ray diffraction, it has been established that the ZnO:Al thin films exhibits the reflections from the (100), (002), (110), and (201) Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e536f495c7ccd4b7db67c943f7bde7ff
https://doi.org/10.1134/s1063783419100354
https://doi.org/10.1134/s1063783419100354
Autor:
N. N. Kosyrev, Ivan V. Nemtsev, S. N. Varnakov, S. G. Patrin, I. A. Yakovlev, V. A. Komarov, T. E. Smolyarova, I. A. Tarasov, Sergey Ovchinnikov
Publikováno v:
Semiconductors. 52:2073-2077
We present in this report the route to produce highly-textured Au3Fe(111)/Fe(110) hybrid nanocrystals on an amorphous surface of SiO2/Si by molecular beam epitaxy. By controlling the quantity of Au atoms deposited onto the SiO2/Si it is possible to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57bad10b9cfe163a2491aa59ddf8473e
https://doi.org/10.1134/s1063782618160364
https://doi.org/10.1134/s1063782618160364
Autor:
F. A. Baron, T. E. Smolyarova, A. S. Tarasov, M. V. Rautskii, I. A. Yakovlev, A. V. Lukyanenko, N. V. Volkov, Sergey Ovchinnikov, I. A. Bondarev, S. N. Varnakov
Publikováno v:
Semiconductors. 52:1875-1878
CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6d7f2ec90678774e64fd41d8fb8b7c7
https://doi.org/10.1134/s1063782618140312
https://doi.org/10.1134/s1063782618140312
Publikováno v:
Semiconductors. 52:675-677
The magnetic properties of ferromagnetic nanodiscs coated with gold, manufactured using the Dip-Pen Nanolithography method, and were studied by atomic-force and magnetic force microscopy methods. The magnetic discs (dots) are represented as nanoagent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0fa8912269f48901af3394302225661
https://doi.org/10.1134/s1063782618050305
https://doi.org/10.1134/s1063782618050305
Autor:
T. E. Smolyarova, A. V. Lukyanenko
Publikováno v:
Semiconductors. 52:636-638
For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0553a3a028655b05b230148e0b883ef1
https://doi.org/10.1134/s1063782618050202
https://doi.org/10.1134/s1063782618050202
Autor:
F. A. Baron, T. E. Smolyarova, A. V. Lukyanenko, Lev V. Shanidze, A. S. Tarasov, N. V. Volkov, I. A. Yakovlev, F. V. Zelenov
Publikováno v:
Journal of Physics: Conference Series. 1410:012013
A top-down nanofabrication approach was used to obtain silicon nanowires from silicon-on-insulator wafers using direct-write electron beam lithography and plasma-reactive ion etching. Fabricated with designed pattern silicon nanowires are 0.4, 0.8, 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe4c9dc420a74cd9089311e53eaf87e
https://doi.org/10.1088/1742-6596/1410/1/012013
https://doi.org/10.1088/1742-6596/1410/1/012013
Autor:
N. V. Radionov, Anatoly S. Chirkin, Vasily G. Arkhipkin, A. M. Vyunishev, A. I. Zaitsev, Sergey A. Myslivets, Mikhail N. Volochaev, T. E. Smolyarova, V. A. Fokin
Publikováno v:
Optics Letters. 44:3761
A method for functional patterning of facets of a nonlinear crystal using focused ion beam milling has been developed. The near-field diffraction on periodic gratings has been experimentally and theoretically studied. The periodicity of the structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::593448598d07d05d9c70d479799e87f2
https://doi.org/10.1364/ol.44.003761
https://doi.org/10.1364/ol.44.003761
Autor:
Sethi, Vikesh1, Sun, Kai1, Newbrook, Daniel1, Runacres, Danielle2, Zhang, Tongjun1, Greenacre, Victoria2, de Groot, C. H.1, Huang, Ruomeng1 r.huang@soton.ac.uk
Publikováno v:
Small Structures. Nov2023, Vol. 4 Issue 11, p1-11. 11p.
Autor:
Fedorov, Dmitri G.
Publikováno v:
Journal of Chemical Physics; 12/21/2022, Vol. 157 Issue 23, p1-12, 12p