Výsledky vyhledávání - "T. E. Haynes"

Particle–solid interactions and 21st century materials science

Autor: T. E. Haynes, Richard F. Haglund, Rene Lopez, L. C. Feldman, Gunter Lüpke, Lynn A. Boatner, Norman Tolk

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 212:1-7

The basic physics that governs the interaction of energetic ion beams with solids has its roots in the atomic and nuclear physics of the last century. The central formalism of Jens Lindhard, describing the “particle–solid interaction”, provides

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::913b782fa82479ecffb2e0cced85437e
https://doi.org/10.1016/s0168-583x(03)01834-2

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Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix

Autor: Rene Lopez, Lynn A. Boatner, Richard F. Haglund, Leonard C. Feldman, T. E. Haynes

Publikováno v: Journal of Applied Physics. 92:4031-4036

Vanadium dioxide single-crystal precipitates with controlled particle sizes were produced in an amorphous, fused SiO2 host by the stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing. The effects of the vanadium

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d5f48246e1f255140b976a4bc086ec6c
https://doi.org/10.1063/1.1503391

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Single crystal Si layers on glass formed by ion cutting

Autor: D. Qiao, S. S. Lau, Ilkka Suni, Kimmo Henttinen, C. P. Li, L. S. Yu, V. M. C. Poon, T. Marek, T. E. Haynes, James W. Mayer, L. S. Hung, M. Cai

Publikováno v: Cai, M, Qiao, D, Yu, L S, Lau, S S, Li, C P, Hung, L S, Haynes, T E, Henttinen, K, Suni, I, Poon, V M C, Marek, T & Mayer, J W 2002, ' Single crystal Si layers on glass formed by ion cutting ', Journal of Applied Physics, vol. 92, no. 6, pp. 3388-3392 . https://doi.org/10.1063/1.1492017

The process of ion cutting was used to integrate single crystalline Si layers on glass for potential active matrix flat panel display and other applications. It was found that p-Si wafers implanted at 100–150 ° C with H with a dose in the order of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::215975af8ba99d8b996b4978b9f0ac8a
https://cris.vtt.fi/en/publications/a88a80d9-f59b-4e98-bd62-5a677b0d05de

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Ta-based interface ohmic contacts to AlGaN/GaN heterostructures

Autor: J. B. Barner, S.-H. Lim, Z. Liliental-Weber, P. M. Asbeck, T. E. Haynes, S. S. Lau, L. Jia, D. Qiao, L. S. Yu

Publikováno v: Journal of Applied Physics. 89:5543-5546

Al/Ti based metallization is commonly used for ohmic contacts to n-GaN and related compounds. We have previously reported an ohmic contact scheme specially designed for AlGaN/GaN heterostructure field-effect transistors (HFETs) [D. Qiao et al., Appl.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::066b9a9fc14cced9a687b9963abd25e2
https://doi.org/10.1063/1.1365431

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Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter

Autor: Dale Conrad Jacobson, Ramki Kalyanaraman, M Yoon, H.-J. Gossmann, Conor S. Rafferty, T. E. Haynes, B.C Larson

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :182-186

In ion implantation related research in Si, the role of interstitial clusters in dopant diffusion is fairly well understood. But there is relatively poor understanding of vacancy clusters, mainly due to the inadequacy of present techniques to profile

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ceecbc9de2b45b78eaae13316dd27a8d
https://doi.org/10.1016/s0168-583x(00)00662-5

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Crystal ion slicing of domain microengineered electro-optic devices on lithium niobate

Autor: Venkatraman Gopalan, T. E. Haynes, David Scrymgeour

Publikováno v: Integrated Ferroelectrics. 41:35-42

We report the successful fabrication of 6 μn thick slices from a ferroelectric domain micro-engineered LiNbO3 wafer device using the crystal ion slicing technique. The device was created by micropatterning ferroelectric domains in a bulk 0.3 mm thic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83905fbe82db118b9145eccf56ff2668
https://doi.org/10.1080/10584580108012805

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Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding

Autor: T. Hoechbauer, Thomas F. Kuech, Y. Zheng, D. M. Hansen, S. S. Lau, T. E. Haynes, M. Nastasi, P. D. Moran, Z. F. Guan

Publikováno v: Journal of Electronic Materials. 29:916-920

Many GaSb devices would greatly benefit from the availability of a semi-insulating substrate. Since semi-insulating GaSb is not currently available, the formation of thin GaSb layers through wafer bonding and tranfer onto a semi-insulating GaAs subst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3a11e5863fa30796f93c56f52f2b3850
https://doi.org/10.1007/s11664-000-0181-6

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Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon

Autor: Lourdes Pelaz, D. J. Eaglesham, S. B. Herner, Dale Conrad Jacobson, R. Simonton, H.-J. Gossmann, Aditya Agarwal, T. E. Haynes

Publikováno v: Materials Science in Semiconductor Processing. 1:17-25

Continued use of ion implantation for doping of silicon integrated circuits will soon require implantation energies below 5 keV to form electrical junctions less than 50 nm deep. At such low energies, dopant diffusion and formation of extended defect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::00ff03eb7c4e48a15b9a9663b32e7a3c
https://doi.org/10.1016/s1369-8001(98)00008-0

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