Výsledky vyhledávání - "T. E. F. M. Standaert"

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

Autor: Christer Hedlund, T. E. F. M. Standaert, Timothy J. Dalton, Eric A. Joseph, Gottlieb S. Oehrlein

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:53-60

The etching of Si, SiO2, Si3N4, and SiCH in fluorocarbon plasmas is accompanied by the formation of a thin steady-state fluorocarbon film at the substrate surface. The thickness of this film and the substrate etch rate have often been related. In the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c475a53dfea12730c49069d0fe186f57
https://doi.org/10.1116/1.1626642

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High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)

Autor: William R. Entley, T. E. F. M. Standaert, J. W. Bartz, P. J. Matsuo, Ronald J. Gutmann, Toh-Ming Lu, Gottlieb S. Oehrlein, Xi Li, John Giles Langan, C. T. Rosenmayer

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:435-446

The pattern transfer of SiO2 hard masks into polytetrafluoroethylene, parylene-N, and poly(arylene ether) (PAE-2) has been characterized in an inductively coupled plasma source. Selected results obtained with blanket parylene-AF4 films are included i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d760c47635f0e25ffec32a3acb89429d
https://doi.org/10.1116/1.1349201

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Etching of xerogel in high-density fluorocarbon plasmas

Autor: T. E. F. M. Standaert, Anurag Jain, Peter C. Wayner, Gottlieb S. Oehrlein, William N. Gill, Eric A. Joseph, Joel L. Plawsky

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:2742-2748

The etching of various xerogel films has been studied in high-density fluorocarbon plasmas. The xerogel etch rate is in part enhanced by the porosity. In discharges resulting in low surface polymerization, such as CF4 or oxygen-rich fluorocarbon plas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8ffcb72dafaaa9bb3dff448f40eaf9e4
https://doi.org/10.1116/1.1290376

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Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing

Autor: T. E. F. M. Standaert, M. Schaepkens, P. J. Matsuo, N. R. Rueger, JJ Beulens, Gottlieb S. Oehrlein, Xi Li

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3272-3280

This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c50ec25b6eff2335812964c8e91d3550
https://doi.org/10.1116/1.582054

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Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor

Autor: M. Schaepkens, N. R. Rueger, M. F. Doemling, T. E. F. M. Standaert, JJ Beulens, Gottlieb S. Oehrlein

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2492-2502

Selective etching of SiO2 over polycrystalline silicon has been studied using CHF3 in an inductively coupled plasma reactor (ICP). Inductive powers between 200 and 1400 W, as well as pressures of 6, 10, and 20 mTorr were used in this study of the etc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a9e1278c24db730a237318056df5973
https://doi.org/10.1116/1.581987

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Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2

Autor: P. J. Matsuo, T. E. F. M. Standaert, S. D. Allen, Timothy J. Dalton, Gottlieb S. Oehrlein

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:741-748

Successful pattern transfer of 0.36–0.62 μm features into fluorinated silicon dioxide, hydrogen silsesquioxane (HSQ), and methyl silsesquioxane (MSQ) has been demonstrated in a transformer coupled plasma (TCP) source using fluorocarbon feedgas che

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a6a243ff918a5c8d6efeac1964ac02a
https://doi.org/10.1116/1.581643

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Surface science issues in plasma etching

Autor: P. J. Matsuo, T. E. F. M. Standaert, Gottlieb S. Oehrlein, M. F. Doemling, N. R. Rueger, M. Schaepkens, B. E. E. Kastenmeier

Publikováno v: IBM Journal of Research and Development. 43:181-197

Pattern transfer by plasma-based etching is one of several key processes required for fabricating silicon-based integrated circuits. We present a brief review of elementary plasma-etching processes...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2baf73d499b8a400823586e7b3d36868
https://doi.org/10.1147/rd.431.0181

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Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Autor: Rcm Roeland Bosch, T. E. F. M. Standaert, M. Schaepkens, Gottlieb S. Oehrlein, J. M. Cook

Publikováno v: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 16(4), 2099-2107. AVS Science and Technology Society

The influence of reactor wall conditions on the characteristics of high density fluorocarbon plasma etch processes has been studied. Results obtained during the etching of oxide, nitride, and silicon in an inductively coupled plasma source fed with v

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4143f4a08bf862c50bf52800f325178
https://doi.org/10.1116/1.581316

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High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

Autor: N. R. Rueger, J. M. Cook, M. Schaepkens, Gottlieb S. Oehrlein, Pgm Patrick Sebel, T. E. F. M. Standaert

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:239-249

For various fluorocarbon processing chemistries in an inductively coupled plasma reactor, we have observed relatively thick (2–7 nm) fluorocarbon layers that exist on the surface during steady state etching of silicon. In steady state, the etch rat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c8fe1bddc32149ca1668d48e42c4ba42
https://doi.org/10.1116/1.580978

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Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

Autor: JJ Beulens, M. Schaepkens, N. R. Rueger, T. E. F. M. Standaert, J. M. Mirza, Gottlieb S. Oehrlein, M. F. Doemling

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1881-1889

It has been found that in the etching of SiO2 using CHF3 in an inductively coupled plasma reactor of the planarized coil design, a thin steady state fluorocarbon film can play an important role in determining the rate of etching. This etching is enco

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36a77f5d5bdfafae319f3c6109a3efd4
https://doi.org/10.1116/1.580655

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