Zobrazeno 1 - 6
of 6
pro vyhledávání: '"T. E. Dyer"'
Autor:
T. E. Dyer, Jiří Stuchlík, Jiri Oswald, Z. Chvoj, K.M.A. El-Kader, J.M. Marshall, I. Ulrych, O. Borusı́k, Ivan Pelant, Jan Kočka, Vladimír Cháb
Publikováno v:
Thin Solid Films. 276:306-309
We report on room-temperature photoluminescence (PL) properties of light-emitting silicon produced by excimer (XeCl, ArF) laser crystallization of undoped hydrogenated amorphous silicon (a-Si:H). PL intensity increases linearly with the number of app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc38b5a8ef27c4c248868af1d07574e6
https://doi.org/10.1016/0040-6090(95)08104-6
https://doi.org/10.1016/0040-6090(95)08104-6
Publikováno v:
Philosophical Magazine B. 72:323-333
The structural and electrical properties of undoped and doped microcrystalline silicon carbide (μc-SiC) thin films prepared by excimer (ArF) laser crystallization of plasma-enhanced chemical vapour deposited hydrogenated amorphous silicon carbide (a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cb17cb575b97245e507f6fbc146cf7a
https://doi.org/10.1080/13642819508239087
https://doi.org/10.1080/13642819508239087
Publikováno v:
Thin Solid Films. 263:99-104
In this work we discuss picosecond photoinduced absorption (PA) decay curves obtained for amorphous and polycrystalline (furnace crystallised and laser crystallised) silicon thin films. The PA temporal decay curves are recorded using a fast modulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::878ada9c57e60aa6600c7d6431e1a16c
https://doi.org/10.1016/0040-6090(95)06545-8
https://doi.org/10.1016/0040-6090(95)06545-8
Publikováno v:
Philosophical Magazine B. 69:509-523
We present novel data on optoelectronic properties observed in the amorphous-to-polycrystalline silicon (polysilicon) phase transition, and the effect on as-crystallized films of a simple post-hydrogenation treatment. The polysilicon thin films were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1c28ea1cd81a080675a3813bfe2f3f9
https://doi.org/10.1080/01418639408240125
https://doi.org/10.1080/01418639408240125
Publikováno v:
Journal of Non-Crystalline Solids. :813-816
Highly conductive (∼10 −4 (Ωcm) −1 ) and wide band gap (∼2.0eV) carrier injection layers of a-SiC:H have been prepared by rf plasma enhanced chemical vapour deposition (PECVD) using the hydrogen dilution technique. These materials have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d21ac6eea1f8bb96c28005a453e756
https://doi.org/10.1016/0022-3093(93)91121-i
https://doi.org/10.1016/0022-3093(93)91121-i
Publikováno v:
Journal of Non-Crystalline Solids. :1001-1004
We report on the opto-electronic and structural properties of polysilicon produced by excimer (ArF) laser crystallisation of undoped hydrogenated amorphous silicon (a-Si:H). Micro structure and average grain size are determined by TEM and electron di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23dc8ccbeebf257371f7961b4dcc4c88
https://doi.org/10.1016/0022-3093(93)91167-2
https://doi.org/10.1016/0022-3093(93)91167-2