Zobrazeno 1 - 10
of 28
pro vyhledávání: '"T. Dosluoglu"'
Publikováno v:
Solid-State Electronics. 36:273-277
The diode equation has been written as a set of state equations of the form e = f( e , x) where f(e, x) is a non-linear function and e is the state vector which comprises of electric field, quasi-Fermi levels and the currents as variables. These stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5551d51aed663f586581f39310dc46
https://doi.org/10.1016/0038-1101(93)90150-o
https://doi.org/10.1016/0038-1101(93)90150-o
Autor:
R. Solanki, T. Dosluoglu
Publikováno v:
Solid State Communications. 85:243-247
One dimensional semiconductor device equations are solved for the double-heterojunction p-i-n diode using a state variable model. Using this model, Poisson equation and the current density equation are solved simultaneously in a single integration st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a934d28390504cd07160e7b5ca46eea3
https://doi.org/10.1016/0038-1098(93)90447-u
https://doi.org/10.1016/0038-1098(93)90447-u
Publikováno v:
IEEE Transactions on Electron Devices. 40:1484-1495
Process and device parameters are characterized in detail for a 30-GHz f/sub T/ submicrometer double poly-Si bipolar technology using a BF/sub 2/-implanted base with a rapid thermal annealing (RTA) process. Temperature ramping during the emitter poly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d161d092de7c80de66f186a3bb5a0452
https://doi.org/10.1109/16.223709
https://doi.org/10.1109/16.223709
Publikováno v:
Journal of Crystal Growth. 106:643-650
Relationship between the flow rates of the precursor gases and the composition of In1−xGaxAs epilayers on InP has been examined. Based on experimental data a linear model has been developed to predict this relationship. This model has been used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c43c805f45d9b214d39fa15a79e1895
https://doi.org/10.1016/0022-0248(90)90038-m
https://doi.org/10.1016/0022-0248(90)90038-m
Publikováno v:
Semiconductor Science and Technology. 9:1276-1278
A high-performance lateral p-n photodiode in LPCVD polysilicon has been successfully fabricated and characterized. The device is shown to have a response time of 30 ps, i.e. a 3 dB cut-off frequency of 5.3 GHz, which we believe is the fastest speed r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::329cbcffb588b313d4b9bf50728f6ac8
https://doi.org/10.1088/0268-1242/9/6/021
https://doi.org/10.1088/0268-1242/9/6/021
Publikováno v:
1991., IEEE International Sympoisum on Circuits and Systems.
Polysilicon thin-film transistors (TFTs) and TFT-CMOS circuits are processed, characterized and modeled for integrated driver applications in high definition display systems. The I-V characteristics of n- and p-channel TFTs are simulated by adjusting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30907f049bf1c22816bbfc3ebfbf3ccc
https://doi.org/10.1109/iscas.1991.176158
https://doi.org/10.1109/iscas.1991.176158
Akademický článek
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Autor:
R. Solanki, T. Dosluoglu
Publikováno v:
Journal of Applied Physics. 69:7327-7329
Carrier concentration and mobility of undoped InGaAs layers grown on InP via organometallic vapor phase epitaxy have been investigated. The mobility limits imposed by various scattering mechanisms were studied over the temperature range 40 to 300 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f7361d0b57219a40e1f01ebf3f2d457
https://doi.org/10.1063/1.347585
https://doi.org/10.1063/1.347585
Publikováno v:
Journal of Crystal Growth. 94:978-980
Laser induced pyrolytic process is used to selectively grow epitaxial GaP microstructures on silicon. The precursor gases are trimethylgallium and tertiarybutylphosphine, a new phosphorus donor.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e784c680414ef0f9251330388b5276b
https://doi.org/10.1016/0022-0248(89)90132-2
https://doi.org/10.1016/0022-0248(89)90132-2
Publikováno v:
Applied Physics Letters. 55:738-740
An ArF excimer laser has been used to achieve homoepitaxy of GaP at 500 °C using trimethylgallium and tertiarybutylphosphine as the precursor gases. Dependence of epitaxial growth on several parameters is examined. It is found that at 500 °C, in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a2746e6bef8f0210d402ca1e5fffd6c
https://doi.org/10.1063/1.101791
https://doi.org/10.1063/1.101791