Zobrazeno 1 - 10
of 12
pro vyhledávání: '"T. D. Subash"'
Publikováno v:
Advances in Materials Science and Engineering, Vol 2014 (2014)
Indium antimonide nanoparticles were synthesized at room temperature. X-ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed us
Externí odkaz:
https://doaj.org/article/1fe74debf42f4be6804639fe5745fd56
Publikováno v:
Progress in Photovoltaics: Research and Applications. 31:93-112
Autor:
J. Ajayan, T. D. Subash
Publikováno v:
Organic and Inorganic Light Emitting Diodes ISBN: 9781003340577
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc3f0a7673b31e85b3079bf947e93ac5
https://doi.org/10.1201/9781003340577-7
https://doi.org/10.1201/9781003340577-7
Publikováno v:
Silicon. 14:3835-3841
Publikováno v:
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO).
Publikováno v:
Peer-to-Peer Networking and Applications. 14:392-402
Secured data transmission and data sharing have always been a challenge on the Internet of things-based networks. Blockchain-enabled peer to peer (P2P) networks are suitable infrastructure for the Internet of Things (IoT) and Beyond 5G (B5G) applicat
Publikováno v:
Advanced Materials Research. :1080-1084
Indium Antimonide (InSb) has the greater electron mobility and saturation velocity of any semiconductor. Also InSb detectors are sensitive between 1–5 μm wavelengths and it belongs to III-V [13] component. In this paper we compare the InSb with so
Publikováno v:
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS).
In this paper a new flip flop in the clock distribution network is introduced. Normally in the clock distribution networks a sinusoidal signal is given at the clock port. Here we are using the low swing DCCF by using reduced swing inverters. This fli
Publikováno v:
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS).
This paper investigates indium antimonide based quantum well field effect transistors with 40 nm physical gate length. Self consistent T-CAD simulations are used to study the high-speed potential of InSb field-effect transistors and its suitable for
Autor:
T. D., Subash
Publikováno v:
International Journal of Advanced Research in Computer Science; Jul2011, Vol. 2 Issue 4, p333-336, 4p