Zobrazeno 1 - 10
of 16
pro vyhledávání: '"T. D. Osentowski"'
Autor:
Steven A. Maranowski, P. N. Grillot, Changhua Chen, A. J. Moll, Herman C Chui, T. D. Osentowski, B. W. Liang, J.-W. Huang, M. J. Peanasky, S. A. Stockman, C. P. Kuo
Publikováno v:
Journal of Electronic Materials. 28:916-925
Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::760c11f732a369fc6ce07c1dca943f09
https://doi.org/10.1007/s11664-999-0220-x
https://doi.org/10.1007/s11664-999-0220-x
Autor:
S. J. Caracci, K. C. Hsieh, C. P. Kuo, A. R. Sugg, M. G. Craford, Frederick A. Kish, J. E. Baker, John Dallesasse, Nick Holonyak, Steven A Maranowski, T. D. Osentowski, Robert M Fletcher
Publikováno v:
Journal of Electronic Materials. 21:1133-1139
Data are presented demonstrating the formation of native oxides from high Al composition In0.5(AlxGa1-x)0.5P (x≳ 0.9) by simple annealing in a “wet” ambient. The oxidation occurs by reaction of the high Al composition crystal with H2O vapor (in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12644482412598b43f77459c783475e
https://doi.org/10.1007/bf02667606
https://doi.org/10.1007/bf02667606
Autor:
C. P. Kuo, S. J. Caracci, M. G. Craford, F. A. Kish, Nick Holonyak, K. C. Hsieh, Steven A Maranowski, Robert M Fletcher, T. D. Osentowski
Publikováno v:
Journal of Applied Physics. 71:2521-2525
Data are presented demonstrating the continuous (cw) room‐temperature (23 °C) operation of planar index‐guided ‘‘buried‐mesa’’ AlxGa1−xAs‐In0.5(AlyGa1−y)0.5P‐ In0.5Ga0.5P heterostructure visible‐spectrum laser diodes. The pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084b792ea84b0fecde9b12fee258885f
https://doi.org/10.1063/1.351067
https://doi.org/10.1063/1.351067
Publikováno v:
Journal of Electronic Materials. 20:1125-1130
The growth and properties of high performance surface light emitting diodes which utilize a GaP window layer are presented. The devices consist of an AlGaInP double heterostructure lattice matched to a GaAs substrate. A lattice mismatched GaP layer i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a174ec2d466e70fa063a3f0053fc7732
https://doi.org/10.1007/bf03030219
https://doi.org/10.1007/bf03030219
Autor:
Nick Holonyak, Q.R. Kuo, M. G. Craford, D.W. Nam, J.M. Dallasasse, T. D. Osentowski, Robert M Fletcher
Publikováno v:
Conference Proceedings LEOS Lasers and Electro-Optics Society.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11e6b7711ee5f8736a654d53c4effb1
https://doi.org/10.1109/leos.1988.689852
https://doi.org/10.1109/leos.1988.689852
Autor:
Dennis C Defevere, Robert M Fletcher, M. G. Craford, Dan A. Steigerwald, J. G. Yu, T. D. Osentowski, M. J. Peanasky, C. P. Kuo, K. G. Park, D. A. Vanderwater, Virginia M. Robbins, F. A. Kish, Frank M. Steranka
Publikováno v:
Applied Physics Letters. 64:2839-2841
Data are presented demonstrating the operation of transparent‐substrate (TS) (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes (LEDs) whose efficiency exceeds that afforded by all other current LED technologies in the green to red (560–630 nm) sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1992ff2e8ec8a9a5f40f35ef4d80a7c7
https://doi.org/10.1063/1.111442
https://doi.org/10.1063/1.111442
Autor:
A. S. H. Liao, L. J. Stinson, C. P. Kuo, T. D. Osentowski, J. G. Yu, Kuo-Hsin Huang, M. G. Craford, Robert M Fletcher
Publikováno v:
Applied Physics Letters. 61:1045-1047
AlGaInP light‐emitting diodes (LEDs) with external quantum efficiencies ≥6% and luminous performance of 20 lm/W have been fabricated. These LEDs are twice as efficient as previously reported AlGaInP devices throughout the spectral region from gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43314672c8a03f82987d54c179cfc3d6
https://doi.org/10.1063/1.107711
https://doi.org/10.1063/1.107711
Autor:
T. D. Osentowski, John Dallesasse, C. P. Kuo, A. R. Sugg, M. G. Craford, Nick Holonyak, Robert M Fletcher, S. J. Caracci, F. A. Kish
Publikováno v:
Applied Physics Letters. 59:354-356
Data are presented demonstrating the formation of stable, device‐quality native oxides from high Al composition In0.5(AlxGa1−x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500 °C). The oxide exhibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceaa14411cbcb807fea3073012601fa2
https://doi.org/10.1063/1.105593
https://doi.org/10.1063/1.105593
Autor:
N. El-Zein, C. P. Kuo, Robert M Fletcher, T. D. Osentowski, M. G. Craford, John Dallesasse, Nick Holonyak
Publikováno v:
Journal of Applied Physics. 68:5871-5873
Data are presented on the continuous‐wave (cw), room‐temperature (300 K) operation of stripe‐geometry In0.5(AlxGa1−x)0.5P quantum‐well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa953776b9bc993809f9ad5631f2e32c
https://doi.org/10.1063/1.346962
https://doi.org/10.1063/1.346962
Autor:
S. J. Rosner, V. M. Robbins, C. P. Kuo, O. Blum, T. D. Osentowski, Robert M Fletcher, J.E. Fouquet
Publikováno v:
LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae1a1c7cd17e2d345f2bf6b404882f7
https://doi.org/10.1109/leos.1990.690684
https://doi.org/10.1109/leos.1990.690684