Zobrazeno 1 - 4
of 4
pro vyhledávání: '"T. D. Lowes"'
Autor:
P. J. Simpson, George C. Weatherly, R. D. Goldberg, T. D. Lowes, I. V. Mitchell, Kimberley C. Hall
Publikováno v:
Canadian Journal of Physics. 74:248-251
Gettering sites comprising dislocations and voids have been formed in silicon at a depth of 0.8 μm by room-temperature implantation with 80 keV energy protons to a fluence of 3 × 1016 cm−2, followed by annealing at a temperature of 800 °C for 20
Autor:
M. Zinke‐Allmang, T. D. Lowes
Publikováno v:
Journal of Applied Physics. 73:4937-4941
A microscopic study of the cluster morphology for the system Ga on GaAs(001) is presented. Clusters are shown to have significant volume fractions below the surface level of the surrounding substrate. A thermodynamic model qualitatively describes thi
Publikováno v:
Applied Physics Letters. 78:3012-3014
Aging properties of oxide-apertured vertical-cavity surface-emitting lasers have been analyzed by photocurrent (PC) measurements at room temperature. We demonstrate that this method allows an analysis of the aging process and provides insight into de
Publikováno v:
Materials Science and Technology. 6:1227-1230
The effect of 0·2%Be on the aging behaviour and microstructure of Al–0·2% Ti alloy is investigated. It is shown that the addition of Be induces some age hardening in non age hardenable AI–0·2Ti alloy and significantly increases the precipitate