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pro vyhledávání: '"T. D. Kumru"'
Autor:
R. Mutlu, T. D. Kumru
Publikováno v:
Radioengineering, Vol 32, Iss 3, Pp 312-324 (2023)
There are nonlinear drift memristor models utilizing window functions in the literature. The resistive memories can also be modeled using memristors. If the memristor’s resistance switches from its minimum value to its maximum value or from its max
Externí odkaz:
https://doaj.org/article/ace96bc88b8b48b98f401d798b591d32