Zobrazeno 1 - 10
of 59
pro vyhledávání: '"T. D. Isshiki"'
Autor:
Xiaowei Li, Archie L. Holmes, Feng Ma, D.S. Bethune, W.P. Risk, Gauri Karve, R. Sudharsanan, Geoffrey S. Kinsey, Xiaofeng Zhang, Joe C. Campbell, T. D. Isshiki, Xiaoguang Zheng, Shuling Wang, J.C. Boisvert, Ning Li
Publikováno v:
IEEE Journal of Quantum Electronics. 39:1281-1286
Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In/sub 0.52/Al/sub 0.48/As multiplication layer. A minimum of ten dark counts per second
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21526d88c3fe72008d355209ab580022
https://doi.org/10.1109/jqe.2003.817244
https://doi.org/10.1109/jqe.2003.817244
Origin of dark counts in In0.53Ga0.47As∕In0.52Al0.48As avalanche photodiodes operated in Geiger mode
Autor:
G. Karve, S. Wang, F. Ma, X. Li, J. C. Campbell, R. G. Ispasoiu, D. S. Bethune, W. P. Risk, G. S. Kinsey, J. C. Boisvert, T. D. Isshiki, R. Sudharsanan
Publikováno v:
Applied Physics Letters. 86:063505
A dark count rate in InP-based single photon counting avalanche photodiodes is a limiting factor to their efficacy. The temperature dependence of the dark count rate was studied to understand its origin in In0.53Ga0.47As∕In0.52Al0.48As separate-abs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdcc324b41907d12c57f6cc8c7d1a0fc
https://doi.org/10.1063/1.1861498
https://doi.org/10.1063/1.1861498
Publikováno v:
Journal of Ovonic Research. may/jun2019, Vol. 15 Issue 3, p151-156. 6p.
Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550nm.
Autor:
Comandar, L. C., Fröhlich, B., Dynes, J. F., Sharpe, A. W., Lucamarini, M., Yuan, Z. L., Penty, R. V., Shields, A. J.
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 8, p083109-1-083109-5, 5p, 4 Graphs
Autor:
Wun, Jhih-Min, Liu, Hao-Yun, Zeng, Yu-Lun, Yang, Shang-Da, Pan, Ci-Ling, Huang, Chen-Bin, Shi, Jin-Wei
Publikováno v:
Journal of Lightwave Technology; Feb2016, Vol. 34 Issue 4, p1387-1397, 11p
Publikováno v:
IEEE Microwave Magazine; Sep2015, Vol. 16 Issue 8, p28-45, 18p
Publikováno v:
2013 IEEE 5th International Nanoelectronics Conference (INEC); 1/ 1/2013, p338-341, 4p
Autor:
Ishikawa, Hiroshi
Publikováno v:
Ultrafast All-Optical Signal Processing Devices; 2008, p89-153, 65p
Autor:
Karve, G., Zheng, X., Holmes, A.L., Jr., Campbell, J.C., Kinsey, G.S., Boisvert, J.C., Isshiki, T.D., Sudharsanan, R., Bethune, D.S., Risk, W.P.
Publikováno v:
16th Annual Meeting of the IEEE Lasers & Electro-Optics Society, 2003 (LEOS 2003); 2003, p769-769, 1p
Autor:
King, R.R., Fetzer, C.M., Law, D.C., Edmondson, K.M., Hojun Yoon, Kinsey, G.S., Krut, D.D., Ermer, J.H., Hebert, P., Cavicchi, B.T., Karam, N.H.
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference; 2006, p1757-1762, 6p