Zobrazeno 1 - 4
of 4
pro vyhledávání: '"T. D. Ellis"'
Publikováno v:
Disability and Rehabilitation. :1-9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab4a8aeb56f00b0b2347acde302e6fb4
https://doi.org/10.1080/09638288.2023.2202418
https://doi.org/10.1080/09638288.2023.2202418
Autor:
T. D. Ellis, Y. D. Kim
Publikováno v:
IEEE Transactions on Nuclear Science. 25:1489-1493
Pulsed lasers operating at infrared wavelengths can act as convenient sources for excitation of excess carriers in silicon devices. It is shown that a pulsed GaAs laser effectively simulates the effects caused by high energy ionizing radiation on int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b155e69d8d63352159a7a2c55047ac76
https://doi.org/10.1109/tns.1978.4329559
https://doi.org/10.1109/tns.1978.4329559
Autor:
T. D. Ellis
Publikováno v:
Acta Horticulturae. :239-244
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f307288531d1fa63476b25d047dcf0
https://doi.org/10.17660/actahortic.1984.148.29
https://doi.org/10.17660/actahortic.1984.148.29
Publikováno v:
Applied Physics Letters. 14:308-310
A decrease in resistivity with increasing magnetic field has been found in high‐purity n‐type germanium subjected to crossed E and B fields at 4.2°K. The effect is due to an increase in carrier density with increasing B caused by impact ionizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e56970d188d933f61278f21ce4060d9d
https://doi.org/10.1063/1.1652662
https://doi.org/10.1063/1.1652662