Zobrazeno 1 - 10
of 16
pro vyhledávání: '"T. Contolatis"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
Submicron gate length, 300 micron gate width GaAs FETs were fabricated on MBE material using direct write e-beam lithography. Evaluation of the devices in a Ka-band test fixture with fin line transitions resulted in an amplifier output power of 110 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c0101d081512e0d8b43aecb95277d2
https://doi.org/10.1109/mwsym.1984.1131704
https://doi.org/10.1109/mwsym.1984.1131704
Publikováno v:
MTT-S International Microwave Symposium Digest.
A 94 GHz GaAs monolithic balanced mixer in a planar microstrip integrated circuit configuration has been demonstrated. A double sideband noise figure of 5.6 dB has been achieved at 94.5 GHz. This includes a 1.5 dB noise contribution of the IF preampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db5c90ecd526aecda128f0d8e5f662d
https://doi.org/10.1109/mwsym.1984.1131683
https://doi.org/10.1109/mwsym.1984.1131683
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
The design and performance of a GaAs monolithic 180 degrees one-bit phase shifter test circuit for Ka-band operation is presented. Over the 27.5 to 30 GHz band the measured differential phase shift is within 10 degrees of the ideal characteristic and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::794ffe70af46e09c0db8802cfdc1f4ec
https://doi.org/10.1109/mcs.1983.1151039
https://doi.org/10.1109/mcs.1983.1151039
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1fe84545d9c2c1c3beb4f287701e7c4
https://doi.org/10.1109/mcs.1984.1113607
https://doi.org/10.1109/mcs.1984.1113607
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a9d6213d6ca1a22b6c33e308a2892f
https://doi.org/10.1109/mcs.1984.1113611
https://doi.org/10.1109/mcs.1984.1113611
Autor:
J.P. Mondal, S. Bounnak, C. Anderson, M. Vickberg, Vladimir Sokolov, J. Geddes, T. Contolatis, D. Carlson, R.C. Becker
Publikováno v:
[1991] GaAs IC Symposium Technical Digest.
A monolithic transmitter consisting of a voltage controlled oscillator and power amplifier has been successfully demonstrated for Ka-band high volume system applications (smart munitions) using nominally quarter micron MESFET technology. The results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c86b6031150cfde160a05c16faf7ad90
https://doi.org/10.1109/gaas.1991.172658
https://doi.org/10.1109/gaas.1991.172658
Publikováno v:
SPIE Proceedings.
The progress made in producing low noise MMICs in Ka-band using an ion-implantation technology is reviewed. The technology is characterized by 3.8 dB noise figure with 14-16 dB gain and is suitable for high volume applications where the cost is to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37883d352396f5e6a639821ca297e307
https://doi.org/10.1117/12.44510
https://doi.org/10.1117/12.44510
Publikováno v:
Electronics Letters. 22:503
A monolithic gain control amplifier for Ka-band has been developed based on 0.25 micron-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c27b9ae85f996b34a71b5df40f17bb3
https://doi.org/10.1049/el:19860341
https://doi.org/10.1049/el:19860341
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