Ni and Ti silicide oxidation for CMOS applications investigated by XRD, XPS and FPP

Autor: Md. Khalilur Rahman, F. Nemouchi, K. Yckache, T. Chevolleau, P. Gergaud

Publikováno v: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, Elsevier, 2017, 71, pp.470-476. ⟨10.1016/j.mssp.2017.06.025⟩
Materials Science in Semiconductor Processing, 2017, 71, pp.470-476. ⟨10.1016/j.mssp.2017.06.025⟩

International audience; Although silicide oxidation was studied 20 years ago, the interest of obtaining a robust process for new application appears significant today. Indeed, for the new architectural development process are required dense and narro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03096737e4b4d7719e59dc561eb7a185
https://hal.univ-grenoble-alpes.fr/hal-01959893

Oxidation of N+ implanted silicon: optical and structural properties

Autor: S. Alexandrova, A. Szekeres, T. Chevolleau

Publikováno v: Surface and Coatings Technology. :281-284

The optical and structural properties of oxidized silicon wafers, previously implanted with N + ions at different doses, were investigated. A decrease in oxidation rate is observed as N + ion dose increases due to the effect of incorporated nitrogen.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4abd3a3b3c4a0cbcaa99a6fa65e7e6fe
https://doi.org/10.1016/s0257-8972(01)01607-3

An XPS study of the SF6 reactive ion beam etching of silicon at low temperatures

Autor: B. Grolleau, P. Y. Tessier, Christophe Cardinaud, T. Chevolleau

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 155:280-288

The surface chemistry of silicon bombarded at low temperature with a beam extracted from a SF6 microwave plasma has been studied using quasi in situ X-ray photoemission spectroscopy. At 123 K and when no ions strike the surface, strong adsorption of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1635c62b1955cc0ba5cc76fb942ca96c
https://doi.org/10.1016/s0168-583x(99)00451-6

Measurement of the radicals' kinetics in pulsed plasmas by UV and VUV absorption spectroscopy and by modulated beam mass spectrometry

Autor: M. Brihoum, P. Bodart, Gilles Cunge, F Boulard, T Chevolleau, Nader Sadeghi

Publikováno v: Plasma Sources Science and Technology
Plasma Sources Science and Technology, IOP Publishing, 2012, pp.21,024006
Plasma Sources Science and Technology, IOP Publishing, 2012, 21, pp.4006. ⟨10.1088/0963-0252/21/2/024006⟩
Plasma Sources Science and Technology, 2012, 21, pp.024006. ⟨10.1088/0963-0252/21/2/024006⟩
Plasma Sources Science and Technology, 2012, 21, pp.4006. ⟨10.1088/0963-0252/21/2/024006⟩
Plasma Sources Science and Technology, IOP Publishing, 2012, 21, pp.024006. ⟨10.1088/0963-0252/21/2/024006)⟩

International audience; This paper reviews recent progress in the development of time-resolved diagnostics to probe high-density pulsed plasma sources. We focus on time-resolved measurements of radicals' densities in the afterglow of pulsed discharge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::487762049c91d9ea0c862739ad6ca525
https://hal.archives-ouvertes.fr/hal-00808664

Poly-Si/TiN/Mo/HfO2 gate stack etching in high-density plasmas

Autor: Gilles Cunge, B. Chenevier, T. Chevolleau, Laurent Vallier, Olivier Joubert, A. Le Gouil, I. Matko

Publikováno v: Journal of Vacuum Science and Technology
Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2010, pp.B 29, (2010), 011024-1 à 9. ⟨10.1116/1.3533939⟩
Journal of Vacuum Science and Technology, 2010, pp.B 29, (2010), 011024-1 à 9. ⟨10.1116/1.3533939⟩

The authors have investigated the dry etch mechanisms of complex poly-Si∕TiN∕HfO2 gate stacks and the issues that are correlated with the introduction of a thin metal layer in the gate stack. Based on atomic force microscopy (AFM) and scanning el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae73c9939ed2c45ca8d3f378c70cb30b
https://hal.archives-ouvertes.fr/hal-00623366