Zobrazeno 1 - 10
of 122
pro vyhledávání: '"T. Carriere"'
Autor:
M. R. D. Rodrigues, A. Bonasera, M. Scisciò, J. A. Pérez-Hernández, M. Ehret, F. Filippi, P. L. Andreoli, M. Huault, H. Larreur, D. Singappuli, D. Molloy, D. Raffestin, M. Alonzo, G. G. Rapisarda, D. Lattuada, G. L. Guardo, C. Verona, Fe. Consoli, G. Petringa, A. McNamee, M. La Cognata, S. Palmerini, T. Carriere, M. Cipriani, G. Di Giorgio, G. Cristofari, R. De Angelis, G. A. P. Cirrone, D. Margarone, L. Giuffrida, D. Batani, P. Nicolai, K. Batani, R. Lera, L. Volpe, D. Giulietti, S. Agarwal, M. Krupka, S. Singh, Fa. Consoli
Publikováno v:
Matter and Radiation at Extremes, Vol 9, Iss 3, Pp 037203-037203-14 (2024)
The discovery of chirped pulse amplification has led to great improvements in laser technology, enabling energetic laser beams to be compressed to pulse durations of tens of femtoseconds and focused to a few micrometers. Protons with energies of tens
Externí odkaz:
https://doaj.org/article/bca5939d63b14b0395df0e868c8a51b4
Akademický článek
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Akademický článek
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Publikováno v:
IEEE Transactions on Nuclear Science. 63:2201-2207
In linear devices, the strong impact of configuration on the SET characterization makes them very difficult to predict without using particle accelerators for each application. In this work, based on heavy ion data, we propose to simulate proton cros
Publikováno v:
Microelectronics Reliability. 55:1491-1495
METIS, SIMPA and PROFIT are engineer tools based on heavy ion cross section for the assessment of Single Event Upsets induced by protons. Whereas SIMPA and PROFIT were based on analytical models; METIS has the particularity to rely on Monte-Carlo sim
Publikováno v:
IEEE Transactions on Nuclear Science. 60:2789-2796
This work investigates the capabilities of 14 MeV neutron tests to characterize the Single Event Upset sensitivity of digital devices. Analysis of secondary ions, experimental tests and extrapolation thanks to nuclear databases are performed to suppo
Publikováno v:
IEEE Transactions on Nuclear Science. 58:813-819
This paper presents a new test methodology based on the characterization of transient events to perform non-destructive radiation sensitivity assessments of destructive single event effects in power devices. Laser tests and simulations are used to de
Autor:
N. Buard, S. Rocheman, C. Weulersse, Jean-Roch Vaillé, Frédéric Wrobel, Frédéric Saigné, T. Carriere
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.3146-3150. ⟨10.1109/TNS.2008.2006264⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.3146-3150. ⟨10.1109/TNS.2008.2006264⟩
Simulation of energy deposition in silicon by nuclear reactions is a crucial point for single event prediction tool development. In order to compare with the simulation of nuclear reactions, a silicon diode is irradiated by a 30 MeV and 63 MeV neutro
Autor:
A. Luu, Florent Miller, T. Carriere, G. Sarrabayrouse, Marise Bafleur, R. Gaillard, P. Poirot, N. Buard, Patrick Austin
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2166-2173
This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3145-3152
This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating area