Zobrazeno 1 - 10
of 34
pro vyhledávání: '"T. Cabout"'
Akademický článek
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Autor:
P. Devoge, H. Aziza, P. Lorenzini, P. Masson, F. Julien, A. Marzaki, A. Malherbe, J. Delalleau, T. Cabout, A. Regnier, S. Niel
Publikováno v:
Microelectronics Reliability. 138:114699
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74b66e29085a6ac3c47c71e5df394d49
https://doi.org/10.1016/j.microrel.2022.114699
https://doi.org/10.1016/j.microrel.2022.114699
Autor:
Q. Hubert, M. Mantelli, Y. Escarabajal, B. Duclaux, S. Audran, V. Arnal, Francois Maugain, Frederique Trenteseaux, E. Lepape, Abderrezak Marzaki, F. Baudin, Julien Delalleau, A. Champenois, D. Galpin, E. Beche, L. Baron, L. Parmigiani, Giada Ghezzi, Pascal Gouraud, F. La Rosa, Stephan Niel, Arnaud Regnier, B. Saidi, N. Cherault, T. Cabout
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM)
This paper discusses an innovative architecture of charge storage NVM cell, which outpaces state-of-the-art in term of bit-cell area. This new concept of memory cell is used today in production for microcontrollers. After cell architecture and activa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::447efcabc0f00c8688ad6ef70ad093bd
Autor:
T. Cabout, Christophe Muller, J. F. Nodin, Marc Bocquet, B. De Salvo, Julien Buckley, Vincent Jousseaume, C. Cagli
Publikováno v:
Thin Solid Films. Vol. 533 (2013)
EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices
EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices, May 2012, Strasbourg, France. pp.19-23, ⟨10.1016/j.tsf.2012.11.050⟩
EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices
EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices, May 2012, Strasbourg, France. pp.19-23, ⟨10.1016/j.tsf.2012.11.050⟩
International audience; This paper deals with the role of platinum or titanium–titanium nitride electrodes on variability of resistive switching characteristics and electrical performances of HfO2-based memory elements. Capacitor-like Pt/HfO2 (10 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c99d8c6ccca1b000544de7b4909e13d
https://doi.org/10.1016/j.tsf.2012.11.050
https://doi.org/10.1016/j.tsf.2012.11.050
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
A totally analytic compact model of bipolar switching in oxide based resistive memory is reported. Analytical expressions reproducing the switching in the case of ramp voltage and short voltage pulses without any iterative procedure are given. The mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f86ab0a4540327110d8fde7a375b251
https://doi.org/10.1109/imw.2016.7495270
https://doi.org/10.1109/imw.2016.7495270
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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Autor:
P. Blaise, Serge Blonkowski, Ch. Muller, E. Vianello, H. Grampeix, S. Jeannot, M. Guillermet, E. Jalaguier, G. Molas, Marc Bocquet, Philippe Candelier, S. Denorme, L. Pemiola, O. Cueto, T. Cabout, J. F. Nodin
Publikováno v:
2014 IEEE 6th International Memory Workshop (IMW).
In this paper the effect of SET temperature on data-retention performances in HfO 2 -based RRAM has been thoroughly investigated. We demonstrated, for the first time to our knowledge, that high temperature programming (even if it has no influence on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e95f1651be0065b30638b340983235fe
https://doi.org/10.1109/imw.2014.6849355
https://doi.org/10.1109/imw.2014.6849355
Autor:
Marc Bocquet, T. Cabout, Damien Deleruyelle, E. Jalaguier, Jean-Michel Portal, Hassen Aziza, Christophe Muller
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2014, 61 (3), pp.674-681. ⟨10.1109/TED.2013.2296793⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (3), pp.674-681. ⟨10.1109/TED.2013.2296793⟩
IEEE Transactions on Electron Devices, 2014, 61 (3), pp.674-681. ⟨10.1109/TED.2013.2296793⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (3), pp.674-681. ⟨10.1109/TED.2013.2296793⟩
International audience; —Emerging non-volatile memories based on resistive switching mechanisms pull intense R&D efforts from both academia and industry. Oxide-based Resistive Random Access Memories (namely OxRAM) gather noteworthy performances, su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::762378c2fe4c9715b6d8540a5daa8321
https://hal.science/hal-01737291/document
https://hal.science/hal-01737291/document
Autor:
J. Cluzel, G. Molas, J. Guy, A. Roule, A. Toffoli, Mathieu Bernard, P. Dorion, H. Grampeix, C. Carabasse, L. Perniola, O. Cueto, E. Souchier, B. De Salvo, P. Blaise, Sylvain Maitrejean, S. Blanc, F. Longnos, J. F. Nodin, E. Vianello, T. Cabout, V. Balan, P. Brianceau
Publikováno v:
2013 IEEE International Electron Devices Meeting.
In this work, we present an experimental and theoretical analysis of scaled (down to 10nm) Al2O3/CuTeGe based CBRAM. We focus on the understanding of the physical mechanisms responsible for the failure of high and low resistance states at high temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c7d3c347872f4bb3c38b5eb70cafa57
https://doi.org/10.1109/iedm.2013.6724722
https://doi.org/10.1109/iedm.2013.6724722
Autor:
E. Jalaguier, T. Cabout, Philippe Candelier, T. Diokh, S. Jeannot, Elise Le-Roux, B. De Salvo, J. F. Nodin, Vincent Jousseaume, H. Grampei, L. Perniola
Publikováno v:
2013 IEEE International Integrated Reliability Workshop Final Report.
In this paper, the failure acceleration behavior of HfO2 based ReRAM under constant voltage and high temperature stresses is studied. We extract the activation energy from disturb measurements in the High Resistance State (HRS) for different dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2114ea1c4ab18b4c274a52b57c4317
https://doi.org/10.1109/iirw.2013.6804170
https://doi.org/10.1109/iirw.2013.6804170