Zobrazeno 1 - 10
of 60
pro vyhledávání: '"T. C. Hasenberg"'
Autor:
R. H. Miles, T. C. Hasenberg
Publikováno v:
Antimonide-Related Strained-Layer Heterostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5521601ce094f6bb0a57725853ff02d7
https://doi.org/10.1201/9780367810634-9
https://doi.org/10.1201/9780367810634-9
Publikováno v:
Journal of Applied Physics. 89:3283-3289
Despite recent progress in electronic structure engineering of type-II materials for mid-infrared lasers, suppression of Auger recombination at room temperature has been limited. We present an active region design, consisting of AlAsSb/InAs/GaInSb/In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e92cab617300edc2bcc17c5af707bad
https://doi.org/10.1063/1.1346657
https://doi.org/10.1063/1.1346657
Publikováno v:
Journal of Applied Physics. 86:713-718
We describe temporally and spectrally resolved measurements of the material differential gain, differential refractive index, and linewidth enhancement factor for a multilayer superlattice intended for use in midwave-infrared semiconductor lasers. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb3a5620185ed709de783f09cf044e93
https://doi.org/10.1063/1.370793
https://doi.org/10.1063/1.370793
Autor:
Jonathon T. Olesberg, Thomas F. Boggess, Christoph H. Grein, D.-J. Jang, T. C. Hasenberg, Michael E. Flatté
Publikováno v:
Physical Review B. 58:13047-13054
Temperature and density-dependent Auger recombination rates are determined for a four-layer broken-gap superlattice designed for suppression of both Auger recombination and intersubband absorption. The structure is intended as the active region of bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e059ec863fe8e83d25554d1dde50bc5
https://doi.org/10.1103/physrevb.58.13047
https://doi.org/10.1103/physrevb.58.13047
Publikováno v:
IEEE Journal of Quantum Electronics. 33:1403-1406
Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-/spl mu/m diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27bcf6818e5acd8d5b2b613ad6779eab
https://doi.org/10.1109/3.605563
https://doi.org/10.1109/3.605563
Publikováno v:
IEEE Journal of Quantum Electronics. 32:1029-1037
A procedure for optimizing MQW hetero-nipi waveguide phase modulators is presented that includes both drive voltage and frequency response. Experimental phase change, absorption change, and frequency response measurements of a modulator designed usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e55b21403ce0279aa18afa71ff22f74
https://doi.org/10.1109/3.502381
https://doi.org/10.1109/3.502381
Publikováno v:
Journal of Crystal Growth. 150:1368-1374
We report the growth optimization of multiple quantum well and modulator samples containing InAs/GaAs short-period strained-layer superlattice (SPSLS) well using our advanced digitized reflection high-energy electron diffraction (RHEED) system. Modul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73493532a93d611561ebbba4628860a3
https://doi.org/10.1016/0022-0248(95)80162-6
https://doi.org/10.1016/0022-0248(95)80162-6
Autor:
D. S. McCallum, T. C. Hasenberg, Thomas F. Boggess, Martin D. Dawson, R. L. Tober, Arthur L. Smirl, X. R. Huang
Publikováno v:
Journal of Applied Physics. 74:1868-1873
The in‐well ambipolar diffusion coefficients and carrier lifetimes in ordered all‐binary quantum wells, composed of (InAs)2(GaAs)5 short‐period strained‐layer superlattices (SPSLSs) grown on [001]‐oriented GaAs substrates, are measured usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fcbdf0b36804fdb806e55cce107eb61
https://doi.org/10.1063/1.355301
https://doi.org/10.1063/1.355301
Autor:
Alexander N. Cartwright, T. C. Hasenberg, D. S. McCallum, Thomas F. Boggess, X. R. Huang, Arthur L. Smirl
Publikováno v:
Journal of Applied Physics. 73:3860-3866
In‐plane transport in an InAs/GaAs semiconductor hetero‐n‐i‐p‐i has been investigated using picosecond transient grating techniques and an order‐of‐magnitude enhancement of the ambipolar transport relative to that measured in a similar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10fce7977dd05811c774b3360099f93d
https://doi.org/10.1063/1.352897
https://doi.org/10.1063/1.352897
Autor:
Thomas F. Boggess, D. S. McCallum, Alan Kost, T. C. Hasenberg, Martin D. Dawson, Arthur L. Smirl, X. R. Huang
Publikováno v:
Journal of Applied Physics. 71:929-932
The nonlinear optical properties of a n‐i‐p‐i structure containing strained superlattice quantum wells in the intrinsic regions are studied using picosecond pump and probe pulses of the same photon energy. For pump fluences as low as 1.1 μJ/cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daa1b9d4b3803278506c4a5478be5f13
https://doi.org/10.1063/1.351315
https://doi.org/10.1063/1.351315