Zobrazeno 1 - 9
of 9
pro vyhledávání: '"T. C. Eschrich"'
Autor:
Renu W. Dave, Saied N. Tehrani, B. N. Engel, F. B. Mancoff, Nicholas D. Rizzo, T. C. Eschrich
Publikováno v:
Applied Physics Letters. 83:1596-1598
We measured switching of a thin film nanomagnet driven by spin-polarized current in giant magnetoresistance spin valves as small as 50 nm×100 nm. Spin-transfer reversal is observed in both dc current and magnetic field sweeps, with a switching curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d4d8afb40acd62af1871d046032f62
https://doi.org/10.1063/1.1604936
https://doi.org/10.1063/1.1604936
Autor:
Thomas J. Morgan, T. C. Eschrich
Publikováno v:
Applied optics. 24(7)
Energy conversion efficiency curves are presented for an oscillator/amplifier dye laser system for seventeen dyes covering the 370--760-nm range using a XeF excimer laser as the dye laser pumping source.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::475d9d47b890f1fc5326faba59326a52
https://pubmed.ncbi.nlm.nih.gov/20436647
https://pubmed.ncbi.nlm.nih.gov/20436647
Publikováno v:
Digest of INTERMAG 2003. International Magnetics Conference (Cat. No.03CH37401).
In this paper, we report on transport measurements in current-perpendicular-to-plane (CCP) giant magnetoresistance (GMR) spin valves. Devices as small as 50 nm /spl times/ 100 nm were fabricated across 6" wafers. Spin-transfer switching was observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c1bab6ec8604d20615c8f8ade8f793
https://doi.org/10.1109/intmag.2003.1230331
https://doi.org/10.1109/intmag.2003.1230331
Autor:
R. W. Ade, D. E. Bossi, T. C. Eschrich, R. D. Carroll, R. P. Basilica, J. M. Berak, R. N. Sacks
Publikováno v:
Digest of Conference on Optical Fiber Communication.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55eaa26c5607ac47697ca7f144063ee3
https://doi.org/10.1364/ofc.1992.thj6
https://doi.org/10.1364/ofc.1992.thj6
Autor:
E.J. Branciforte, R.D. Carroll, T. C. Eschrich, D.E. Cullen, R.N. Sacks, W.J. Tanski, S.W. Merritt
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:352
Molecular‐beam epitaxy (MBE) has been used to grow very high quality layers for the confinement and transport of electrons in heterostructure acoustic charge transport (HACT) devices. In this paper the HACT device concept is reviewed, details of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b42b9f6d870051c3bee511f625a06ff
https://doi.org/10.1116/1.585069
https://doi.org/10.1116/1.585069
Publikováno v:
Journal of Applied Physics. 60:3232-3234
X‐ray photoelectron spectroscopy and ion scattering spectroscopy studies of HF‐treated silicon surfaces are described in an effort to understand the chemical termination leading to the near ideal electrical passivation of such surfaces. Results s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e5a7d575ebc44a0afebaa220c76deaf
https://doi.org/10.1063/1.337743
https://doi.org/10.1063/1.337743
Publikováno v:
IEEE Transactions on Electron Devices. 36:1213-1215
Results are presented on GaAs MESFET devices with nonalloyed ohmic contacts fabricated using a graded (InGa)As cap layer. Nonalloyed contacts do not require the ohmic alloy step and have much smoother morphology than alloyed metal contacts, permittin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7784a89e53c8e899143239d4940bbe41
https://doi.org/10.1109/16.24371
https://doi.org/10.1109/16.24371
Autor:
R.D. Carroll, D.E. Cullen, S.W. Merritt, E.J. Branciforte, R.N. Sacks, W.J. Tanski, T. C. Eschrich
Publikováno v:
1987 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90449a339978ea0d07256d50e395b63b
https://doi.org/10.1109/iedm.1987.191582
https://doi.org/10.1109/iedm.1987.191582
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:685
The demonstration of charge transport in GaAs epitaxial layers by surface acoustic waves in 1982 has led to a great deal of interest in using acoustic charge transport (ACT) technology for high‐speed analog signal processors. Successful implementat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67a35c69d4ea87daba058cdf4d7b2cad
https://doi.org/10.1116/1.584391
https://doi.org/10.1116/1.584391