Zobrazeno 1 - 10
of 76
pro vyhledávání: '"T. Boufaden"'
Autor:
F. Ben Nasr, H.-J. Fitting, Z. Fakhfakh, Roushdey Salh, T. Boufaden, Adel Matoussi, Samir Guermazi, B. Eljani
Publikováno v:
Journal of Luminescence. 130:399-403
GaN films have been grown on porous silicon at high temperatures (800–1050 °C) by metal organic vapor phase epitaxy. The optical properties of GaN layers were investigated by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. PL spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9835dab5ac6e5fa3c8213f642ed840c1
https://doi.org/10.1016/j.jlumin.2009.10.003
https://doi.org/10.1016/j.jlumin.2009.10.003
Publikováno v:
Microelectronics Journal. 40:363-366
Si-doped GaN layers have been grown using SiN treatment growth by MOVPE on sapphire (0001) in a homemade vertical reactor. The growth was monitored by in situ laser reflectometry. The growth temperature was varied between 1090 and 1150^oC, keeping co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c88b5a502a5cd0a41c1b389d945baf92
https://doi.org/10.1016/j.mejo.2008.07.059
https://doi.org/10.1016/j.mejo.2008.07.059
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2008, 310, pp.3274-3277. ⟨10.1016/j.jcrysgro.2008.04.008⟩
Journal of Crystal Growth, 2008, 310, pp.3274-3277. ⟨10.1016/j.jcrysgro.2008.04.008⟩
Journal of Crystal Growth, Elsevier, 2008, 310, pp.3274-3277. ⟨10.1016/j.jcrysgro.2008.04.008⟩
Journal of Crystal Growth, 2008, 310, pp.3274-3277. ⟨10.1016/j.jcrysgro.2008.04.008⟩
The diffusion of magnesium has been studied in GaN layers grown on sapphire substrate by atmospheric pressure metalorganic vapor-phase-epitaxy (MOVPE) in a “home-made” reactor. Secondary Ion Mass Spectroscopy (SIMS) was used to visualise the Mg p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f7f41c975529f8f7923c22bc0d7f919
https://doi.org/10.1016/j.jcrysgro.2008.04.008
https://doi.org/10.1016/j.jcrysgro.2008.04.008
Autor:
B. Eljani, Adel Matoussi, F. Ben Nasr, Roushdey Salh, Z. Fakhfakh, Samir Guermazi, H.-J. Fitting, T. Boufaden
Publikováno v:
Materials Letters. 62:515-519
Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::951665c77a86f6d660ac55fa838df97a
https://doi.org/10.1016/j.matlet.2007.05.079
https://doi.org/10.1016/j.matlet.2007.05.079
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:1156-1159
In this work, we report the electric investigation of thin gallium nitride films by the thermal step method (TSM). The space charge dynamics was studied using the thermal step method with applied negative step (ΔT = −30 °C). The experimental TSM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34b5f135e5f69614bf0c4ad866c255ef
https://doi.org/10.1007/s10854-007-9504-1
https://doi.org/10.1007/s10854-007-9504-1
Publikováno v:
physica status solidi c. 4:145-149
The GaN decomposition versus the annealing ambient (H2, N2 + H2) have been investigated in atmospheric pressure metal organic vapor phase epitaxy (AP-MOVPE) vertical reactor. A comparison between the low temperature GaN (LT-GaN) decomposition in a ve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e50ec3cf8ad514b134fac76ece1453
https://doi.org/10.1002/pssc.200673509
https://doi.org/10.1002/pssc.200673509
Publikováno v:
Superlattices and Microstructures. 40:483-489
Metal Organic Vapour Phase Epitaxy (MOVPE) of AlN and GaN layers at a temperature of 1080 ∘C were performed on porous Si(111) and Si(111) substrates. The thermal stability of porous silicon (PS) is studied versus growth time under AlN and GaN growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b13f44ca61c4d330e26b8d515d949fd4
https://doi.org/10.1016/j.spmi.2006.09.022
https://doi.org/10.1016/j.spmi.2006.09.022
Publikováno v:
Superlattices and Microstructures. 40:496-500
Equilibrium calculations of Si-doping in GaN are investigated using the Gemini code. The method of the calculation is based on the minimisation of the Gibbs free energy. Experimental growth conditions are used for the calculation. The variables are t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c2409c6e7225fa64bacb07a8cf3943a
https://doi.org/10.1016/j.spmi.2006.09.023
https://doi.org/10.1016/j.spmi.2006.09.023
Publikováno v:
Applied Surface Science. 253:241-245
High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2092c004a78995b107cdafba5e65bc07
https://doi.org/10.1016/j.apsusc.2006.05.128
https://doi.org/10.1016/j.apsusc.2006.05.128
Autor:
S. Bergaoui, Samir Guermazi, Alain Toureille, Adel Matoussi, Y. Mlik, B. El Jani, T. Boufaden
Publikováno v:
Materials Science and Engineering: B
Materials Science and Engineering: B, Elsevier, 2006, 130 (1-3), pp.89-93. ⟨10.1016/j.mseb.2006.02.053⟩
Materials Science and Engineering: B, Elsevier, 2006, 130 (1-3), pp.89-93. ⟨10.1016/j.mseb.2006.02.053⟩
International audience; In this paper, we report the electric investigation of thin nitride gallium films by the capacitance voltage technique and the thermal step method (TSM). The C-V analysis at 1 MHz of Au/GaN diode reveals MOS behaviour and show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::962a3d6ecc67fcbe95d232e9005bd81a
https://doi.org/10.1016/j.mseb.2006.02.053
https://doi.org/10.1016/j.mseb.2006.02.053