Zobrazeno 1 - 5
of 5
pro vyhledávání: '"T. Bottner"'
Autor:
M. Wurzer, T. Bottner, K. Aufinger, R. Stengl, Herbert Knapp, J. Bock, T.F. Meister, S. Boguth, H. Schafer, W. Perndl
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
A SiGe bipolar technology with a transit frequency of 225 GHz and a maximum oscillation frequency of 300 GHz is described. With a ring oscillator gate delay of 3.3 ps and a static frequency divider operating up to 102 GHz input frequency state-of-the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41dbb9542fa0b080f268ac56798541cb
https://doi.org/10.1109/iedm.2004.1419124
https://doi.org/10.1109/iedm.2004.1419124
Autor:
S. Boguth, Herbert Schäfer, Klaus Aufinger, R. Schreiter, M. Rest, Thomas Meister, R. Stengl, Josef Bock, T. Bottner, Martin Wurzer, W. Perndl, Herbert Knapp
Publikováno v:
Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..
A SiGe bipolar technology for high frequency applications is presented. A transit frequency of 206 GHz, a maximum oscillation frequency of 200 GHz and a ring oscillator gate delay time of 3.9 ps have been obtained. With a 110 GHz dynamic frequency di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374163fea302e4472974acb6b37eeafe
https://doi.org/10.1109/smic.2004.1398167
https://doi.org/10.1109/smic.2004.1398167
Autor:
Herbert Schäfer, Herbert Knapp, Klaus Aufinger, R. Schreiter, R. Stengl, M. Rest, Thomas Meister, W. Perndl, T. Bottner, Josef Bock, Martin Wurzer, Sabine Boguth
Publikováno v:
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.
A SiGe bipolar technology for automotive radar applications around 77 GHz has been developed. A cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 3.5 ps have been obtained. First key building blocks for 77
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f45e00f714068759d6fe95d9d2f25d6
https://doi.org/10.1109/bipol.2004.1365751
https://doi.org/10.1109/bipol.2004.1365751
Autor:
B. Hasler, T. Huttner, Markus Schwerd, H. Heineder, Andrea Mitchell, M. Seck, S. Drexl, M. Schrenk, Rudolf Lachner, T. Bottner, V. Kubrak, Heinrich Körner
Publikováno v:
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..
Intensive world wide development work in high-speed bipolar RF technologies leads to a rapid increase in transistor performance. This paper describes a manufacturable leading-edge 0.35 /spl mu/m bipolar SiGe:C technology offering balanced transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::597e7119adc3d9072d6d20a7796dbaaa
https://doi.org/10.1109/smic.2003.1196656
https://doi.org/10.1109/smic.2003.1196656
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
Systematic investigations are performed on the effect of reactive ion etching (RIE) using CH/sub 4//H/sub 2/ based gases on InP based semiconductors. From rutherford backscattering analysis a strong dependence of crystalline damage on process paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc6684a91b2ffe2175ea5fe540fea36
https://doi.org/10.1109/iciprm.1996.491948
https://doi.org/10.1109/iciprm.1996.491948