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Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

Autor: Gerbe W. G. van Dreumel, Sjoerd Verhagen, T. Bohnen, Hina Ashraf, P.R. Hageman, Jan L. Weyher, Elias Vlieg

Publikováno v: Journal of Crystal Growth, 312, 2542-2550
Journal of Crystal Growth, 312, 18, pp. 2542-2550

The main limitation in the application of hydride vapor phase epitaxy for the large scale production of thick free-standing GaN substrates is the so-called parasitic deposition, which limits the growth time and wafer thickness by blocking the gallium

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bd9fa1922280da3c4184569af00ab8a
https://doi.org/10.1016/j.jcrysgro.2010.04.010

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The nucleation of HCl and Cl 2 ‐based HVPE GaN on mis‐oriented sapphire substrates

Autor: Aryan E. F. de Jong, Hina Ashraf, Willem J. P. van Enckevort, T. Bohnen, Jan L. Weyher, P.R. Hageman, Elias Vlieg, Gerbe W. G. van Dreumel

Publikováno v: physica status solidi c. 7:1749-1755

The nucleation of both classic HCl-based and novel Cl based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl2in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c99d522b2a78800bc4ddaadc44639deb
https://doi.org/10.1002/pssc.200983444

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Growth of scandium aluminum nitride nanowires on ScN(111) films on 6H-SiC substrates by HVPE

Autor: T. Bohnen, P.R. Hageman, James H. Edgar, Gerbe W. G. van Dreumel, Willem J. P. van Enckevort, Rienk E. Algra, Elias Vlieg, Marcel A. Verheijen

Publikováno v: physica status solidi (a). 206:2809-2815

The formation of ScAlN nanowires on ScN/6H-SiC(0001) by hydride vapor phase epitaxy (HVPE) was analyzed. The diameters and lengths of the nanowires were 50 to 150 nm and 1 µm, respectively. The nanowires had a Al/Sc metal ratio of 95/5 as measured b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92d3558cab01aad6f110e7bfd74507ff
https://doi.org/10.1002/pssa.200925060

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HVPE of scandium nitride on 6H–SiC(0001)

Autor: T. Bohnen, P.R. Hageman, James H. Edgar

Publikováno v: Journal of Crystal Growth, 310, 6, pp. 1075-1080
Journal of Crystal Growth, 310, 1075-1080

The epitaxy of scandium nitride deposited by hydride vapor phase epitaxy on 6H–SiC(0 0 0 1) substrates is reported. The structure and composition of the deposited films were dependent on both the scandium metal source and substrate temperatures. At

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f474f8f2a49be5a72d18e9cb13c6baca
https://doi.org/10.1016/j.jcrysgro.2007.12.053

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Influence of In on the surface morphology of HYPE grown GaN

Autor: P.K. Larsen, P.R. Hageman, T. Bohnen, W.J.P. van Enckevort, C.E.C. Dam

Publikováno v: Journal of Crystal Growth, 307, 1, pp. 19-25
Journal of Crystal Growth, 307, 19-25

In this paper, a study is presented on the effect of In on the surface morphology of GaN grown by HVPE. Experiments are performed with N2 and H2 as the carrier gasses, both with and without In present in the reactor. The adding of In increases the mo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a41a14a92696a9a460d1ebf05ab4cd03
https://doi.org/10.1016/j.jcrysgro.2007.06.005

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Realising epitaxial growth of GaN on (001) diamond

Autor: A.A.J. van den Heuvel, P.R. Hageman, Paul Tinnemans, J. J. ter Meulen, W.J.P. van Enckevort, T. Bohnen, Josephus Gerardus Buijnsters, Elias Vlieg, G.W.G. van Dreumel

Publikováno v: Journal of Applied Physics, 110, 1, pp. 013503-1-013503-12
Journal of Applied Physics, 110, 013503-1-013503-12

By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7e8088bdfdfea0ac143783bdedf97df
https://hdl.handle.net/2066/92260

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Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates

Autor: T. Bohnen, J. J. ter Meulen, Elias Vlieg, Josephus Gerardus Buijnsters, P.R. Hageman, W.J.P. van Enckevort, G.W.G. van Dreumel

Publikováno v: Diamond and Related Materials, 19, 437-440
Diamond and Related Materials, 19, 5-6, pp. 437-440

In this study, {0001} oriented GaN crystals have been grown on freestanding, polycrystalline diamond substrates using AlN and GaN nucleation layers (NLs). XRD measurements and SEM analysis showed that the application of a thin AlN NL gives the best s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4013fe760a6b9dd26f8daa57398b8d38
http://hdl.handle.net/2066/83561

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ScAlN nanowires: A cathodoluminescence study

Autor: P.R. Hageman, James H. Edgar, Elias Vlieg, Marcel A. Verheijen, Rositsa Yakimova, Gholamreza Yazdi, G.W.G. van Dreumel, T. Bohnen, Rienk E. Algra

Publikováno v: Journal of Crystal Growth, 311, 11, pp. 3147-3151
Journal of Crystal Growth, 311, 3147-3151

Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning ele

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2cbe8aee53cc353610f18b6af1b6bd45
https://hdl.handle.net/2066/112520

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Growth of GaN on nano-crystalline diamond substrates

Autor: Josephus Gerardus Buijnsters, J. J. ter Meulen, Elias Vlieg, T. Bohnen, P.R. Hageman, G.W.G. van Dreumel, W.J.P. van Enckevort

Publikováno v: Diamond and Related Materials, 18, 1043-1047
Diamond and Related Materials, 18, 5-8, pp. 1043-1047

In this study GaN has been grown on nano-crystalline diamond substrates utilizing metal-organic chemical vapour deposition (MOCVD). It is shown that the growth of closed GaN films onto synthetic diamond substrates is feasible, when applying the corre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad5ea17a464e04fe182a49f9cd8896bd
http://hdl.handle.net/2066/75292

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On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes

Autor: Hina Ashraf, Willem J. P. van Enckevort, Elias Vlieg, T. Bohnen, Gerbe W. G. van Dreumel, Aryan E. F. de Jong, P.R. Hageman, Jan L. Weyher

Publikováno v: Journal of Crystal Growth, 311, 4685-4691
Journal of Crystal Growth, 311, 23-24, pp. 4685-4691

The nucleation of HVPE GaN on misoriented sapphire substrates and the transition from the nucleation layer to an epitaxial film were investigated. After a KOH/NaOH eutectic etch of the approximately 45 μ m thick GaN layer, grown on sapphire using a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aaf312511f1fbdbc758fcd402a2e1419
http://hdl.handle.net/2066/75497

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