Zobrazeno 1 - 10
of 45
pro vyhledávání: '"T. Bertaud"'
Autor:
Peter Zaumseil, Malgorzata Sowinska, Thomas Schroeder, Jordi Suñé, Damian Walczyk, Andrei Gloskovskii, Christian Walczyk, Xavier Cartoixà, P. Calka, T. Bertaud, Jarek Dabrowski
Publikováno v:
ACS applied materials & interfaces 6(7), 5056-5060 (2014). doi:10.1021/am500137y
The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fe8ea789f9b6656929197dd2119daac
https://doi.org/10.1021/am500137y
https://doi.org/10.1021/am500137y
Autor:
Christian Wenger, Christian Walczyk, Bernd Tillack, Damian Walczyk, Malgorzata Sowinska, Gunter Schoof, Valery Stikanov, T. Bertaud, Sebastian Thiess, Dirk Wolansky, Thomas Schroeder
Publikováno v:
ECS transactions 50, 21-26 (2012). doi:10.1149/05004.0021ecst
This open-label extension evaluated the long-term efficacy and tolerability of rufinamide in patients with Lennox-Gastaut syndrome (LGS) who had previously completed a 12-week double-blind study.In total, 124 patients (aged 4-37 years), receiving 1-3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65a5cc8bde20144f848f8a7e4cdb324c
https://doi.org/10.1149/05004.0021ecst
https://doi.org/10.1149/05004.0021ecst
Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material
Autor:
S. Kubotsch, H. Grampeix, Vincent Jousseaume, Ch. Walczyk, Christophe Vallée, Patrice Gonon, Malgorzata Sowinska, T. Bertaud, Damian Walczyk, Thomas Schroeder, C. Mannequin, Ch. Wenger
Publikováno v:
Thin Solid Films. 520:4551-4555
This paper deals with the impact of the top metal electrode on the resistive switching properties of HfO 2 -based Metal-Insulator-Metal diodes. By screening five different metals as top electrode, Al–Cu–Hf–Pt–Ti, we have demonstrated the feas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9863fa8da06d0f713ae2ce79a422705f
https://doi.org/10.1016/j.tsf.2011.10.183
https://doi.org/10.1016/j.tsf.2011.10.183
Autor:
Cedric Bermond, Thierry Lacrevaz, Mickael Gros-Jean, Alexis Farcy, T. Bertaud, Serge Blonkowski, Corentin Vallée, Bernard Flechet
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 2:502-509
This paper deals with the electrical and wideband frequency characterizations of metal-insulator-metal (MIM) capacitors integrating the medium-k material ZrO2. First, the in situ material electrical properties are characterized in a frequency range f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1659a9245869b25e892fc8a53d1e934
https://doi.org/10.1109/tcpmt.2011.2182611
https://doi.org/10.1109/tcpmt.2011.2182611
Autor:
M. Lukosius, Mirko Fraschke, Malgorzata Sowinska, Thomas Schroeder, Christian Walczyk, Bernd Tillack, T. Bertaud, Enrique Miranda, Ch. Wenger, Dirk Wolansky, Damian Walczyk
Publikováno v:
IEEE Transactions on Electron Devices. 58:3124-3131
Back-end-of-line integrated 1 × μm2 TiN/HfO2/Ti/TiN MIM memory devices in a 0.25- μm complementary metal-oxide-semiconductor technology were built to investigate the conduction mechanism and the resistive switching behavior as a function of temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::580f04b3284c579890115bc5a61c393a
https://doi.org/10.1109/ted.2011.2160265
https://doi.org/10.1109/ted.2011.2160265
Autor:
T. Bertaud, Cedric Bermond, Bernard Flechet, Thierry Lacrevaz, Emmanuel Defay, J. Abergel, Bassem Salem, S. Capraro
Publikováno v:
Microelectronic Engineering. 88:564-568
This paper deals with the electrical wideband frequency and in situ characterization of aluminum nitride (AlN) material. This material is interesting for bulk acoustic wave (BAW) or surface acoustic wave (SAW) devices. In a first step, low frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::291022abfaa8b344ec48a46f1ca5d437
https://doi.org/10.1016/j.mee.2010.06.033
https://doi.org/10.1016/j.mee.2010.06.033
Autor:
Alexis Farcy, B. Guigues, Joaquim Torres, Y. Morand, Emmanuel Defay, T. Bertaud, Serge Blonkowski, Bernard Flechet, T.T. Vo, Cedric Bermond, Thierry Lacrevaz
Publikováno v:
IET Microwaves, Antennas & Propagation. 2:781-788
Integration of high permittivity dielectrics or commonly named high- k dielectrics is widely investigated as a way to reduce passive component size in the chip. The complex permittivity microwave characterisation of medium- k materials such as HfO 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ffe7a1b048a77141df58fcfc6fa5a3
https://doi.org/10.1049/iet-map:20070344
https://doi.org/10.1049/iet-map:20070344
Autor:
Mindaugas Lukosius, Malgorzata Sowinska, T. Bertaud, Ch. Walczyk, Bernd Tillack, Ch. Wenger, Mirko Fraschke, Damian Walczyk, Thomas Schroeder
Publikováno v:
Microelectronic Engineering. 88:1133-1135
This work addresses a 1T1R RRAM architecture, which allows for the precise and reliable control of the forming/set current by using an access transistor. The 1T1R devices were fabricated in a modified [email protected] CMOS technology. The memory cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e20ee313b820b7cec2d1fe5896a89886
https://doi.org/10.1016/j.mee.2011.03.123
https://doi.org/10.1016/j.mee.2011.03.123
Autor:
Valeriy Stikanov, Alessandro Grossi, Damian Walczyk, Cristian Zambelli, Bernd Tillack, Christian Walczyk, T. Bertaud, Thomas Schroeder, Piero Olivo
The design and the manufacturing of ReRAM test structures allow deeper insight in the performance of the FORM-ING, RESET, and SET operations at array level, providing details on the process induced variability of the technology, and on the potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03ea9d899ffb56c10d2544a0658ea026
http://hdl.handle.net/11392/2007212
http://hdl.handle.net/11392/2007212
Autor:
Damian Walczyk, Malgorzata Sowinska, Christian Walczyk, P. Calka, Lambert Alff, Sebastian Thiess, T. Bertaud, Thomas Schroeder
Publikováno v:
Journal of applied physics 115(20), 204509 (2014). doi:10.1063/1.4879678
In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a23dac347be70cad26fdad39c1c3569d
https://bib-pubdb1.desy.de/record/170963
https://bib-pubdb1.desy.de/record/170963