Zobrazeno 1 - 10
of 34
pro vyhledávání: '"T. Bergunde"'
Publikováno v:
Journal of Crystal Growth. 248:235-239
A procedure and set-up for high-precision determination of the true surface temperature of wafers during growth by metalorganic vapour phase epitaxy is described. The reflectance of the surface measured by an EpiRAS R sensor is used for correcting th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827b260cc9162974ebfabc50285551ab
https://doi.org/10.1016/s0022-0248(02)01856-0
https://doi.org/10.1016/s0022-0248(02)01856-0
Autor:
Andre Maaßdorf, Frank Brunner, P. Kurpas, Marcus Weyers, T. Bergunde, A. Braun, Eberhard Richter, Joachim Würfl
Publikováno v:
Journal of Materials Science: Materials in Electronics. 13:665-670
This work reports on optimization of MOVPE growth procedures for high-quality, highly uniform (4 inch) and highly reliable Ga0.5In0.5P/GaAs-HBTs in a commercial multiwafer reactor. Appropriately to this application the main focus of research have bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d35cd1489370ba4b2dd3e499c89425f
https://doi.org/10.1023/a:1020666327680
https://doi.org/10.1023/a:1020666327680
Autor:
P. Kurpas, M. Achouche, Eberhard Richter, Markus Weyers, Joachim Würfl, Andre Maaßdorf, Frank Brunner, T. Bergunde
Publikováno v:
Journal of Crystal Growth. 221:53-58
In this work different approaches for carbon doping of GaAs in MOVPE are compared with respect to their growth-and device-related material properties. Doping levels up to 6 x 10 19 cm -3 and smooth surface morphologies are achieved with either intrin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156939277c575043bc8e0021fe51354d
https://doi.org/10.1016/s0022-0248(00)00648-5
https://doi.org/10.1016/s0022-0248(00)00648-5
Publikováno v:
Journal of Crystal Growth. 208:85-92
Modeling and experimental studies of Ga 1− x In x P growth in the Planetary Reactor ® are presented and the mechanisms governing growth rate and compositional uniformity are identified. Reaction rate constants for the kinetically limited formation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e02f192f4f0f4548c7c54d86dad0d233
https://doi.org/10.1016/s0022-0248(99)00447-9
https://doi.org/10.1016/s0022-0248(99)00447-9
Autor:
L. Kadinski, Holger Jürgensen, D. Schmitz, Gert Strauch, V.S. Yuferev, Martin Dauelsberg, Yu.N. Makarov, T. Bergunde
Publikováno v:
Journal of Crystal Growth. 180:660-669
A global transport model for the MOVPE of III–V growth based on the finite volume solution of coupled flow, heat and mass transfer, including detailed radiative transfer, multicomponent diffusion and homogeneous and heterogeneous chemical reactions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c309f920c6a26d310c60e20577dcf9f7
https://doi.org/10.1016/s0022-0248(97)00260-1
https://doi.org/10.1016/s0022-0248(97)00260-1
Publikováno v:
Scopus-Elsevier
Copyright (c) 1997 Elsevier Science S.A. All rights reserved. The compensation ratio in high-purity n-type GaAs layers grown by metal−organic vapour phase epitaxy was determined from low-temperature photoluminescence measurements using the intensit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5adb734f89dd8b470ae6ea68e67357a0
https://doi.org/10.1016/s0921-5107(96)01770-9
https://doi.org/10.1016/s0921-5107(96)01770-9
Publikováno v:
physica status solidi (a). 121:K55-K59
Etude des proprietes de transport electrique des couches de HgTe et CdTe. Mesures de l'effet Hall. On deduit de l'analyse des resultats que l'echantillon HgTe possede une forte mobilite tandis que CdTe presente une forte resistivite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb457f760425ea2836f27e71358df01a
https://doi.org/10.1002/pssa.2211210154
https://doi.org/10.1002/pssa.2211210154
Autor:
T. Bergunde, G. Hey, G. LaRoche, S. Taylor, E. Fernandez, W. Kostler, W. Zimmermann, L. Gerlach, Matthias Meusel, C. Signorini, Andreas W. Bett, Frank Dimroth, R. Kern, G. Strobl, Wim Geens
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
A program for the development and qualification of advanced triple-junction space solar cells in Europe was initiated and supported by the European Space Agency ESA (contracts No. 18767/04/NL/FM "Development of Next Generation GaAs-based Multi Juncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f636781f72eef5f213fa226b95325d99
https://doi.org/10.1109/wcpec.2006.279839
https://doi.org/10.1109/wcpec.2006.279839
Autor:
W. Doser, A. Maassdorf, H. Blanck, Wolfgang Heinrich, M. Neuner, P. Heymann, Frank Schnieder, T. Bergunde, B. Janke, T. Grasshoff, P. Kurpas, P. Auxemery, Joachim Würfl
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
GaInP/GaAs HBTs suitable for high-voltage operation (/spl ges/ 26 V) were developed. The HBTs show high current driving capabilities delivering at least 3 A of peak DC current. Furthermore, high power levels beyond 10 W corresponding to power densiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11cb315e6b2d3ced93608638424b5ce9
https://doi.org/10.1109/iedm.2004.1419220
https://doi.org/10.1109/iedm.2004.1419220
Autor:
Markus Weyers, Joachim Würfl, Frank Brunner, T. Bergunde, P. Kurpas, A. Maassdorf, H. Blanck, Günther Tränkle, W. Doser
Publikováno v:
IEEE International Electron Devices Meeting 2003.
We report on the realization of GaAs-based double heterojunction bipolar transistors (DHBTs) using GaInP as collector material. With a collector thickness of 1.5 /spl mu/m we achieved up to 70 V base-collector breakdown voltage. We used a GaAs spacer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2abf8f5207b9dad5bccced03f6f0c9db
https://doi.org/10.1109/iedm.2003.1269347
https://doi.org/10.1109/iedm.2003.1269347