Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography

Autor: Tomáš Burian, Libor Juha, T. Balcer, H. Wabnitz, Dorota Klinger, Ryszard Sobierajski, D. Żymierska, Sven Toleikis, Thomas Tschentscher, A.J. Gleeson, Carsten Paulmann, Wojciech Wierzchowski, Harald Sinn, Jaromír Chalupský, L. Vysin, D. Sobota, K. Tiedtke, Jérôme Gaudin, Jerzy B. Pelka, Věra Hájková, Krzysztof Wieteska

Publikováno v: Radiation Physics and Chemistry. 93:99-103

Silicon crystalline samples were exposed to intense single pulses of XUV radiation ( λ =13.5 nm) what lead to melting and ablation of the surface material. The deformation field around craters along the whole thickness of silicon wafers was observed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::876c79884906376c245ad36baa4e7bfa
https://doi.org/10.1016/j.radphyschem.2013.04.025

X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses

Autor: D. Żymierska, Dorota Klinger, H. Wabnitz, Jérôme Gaudin, Věra Hájková, Jaromír Chalupský, Sven Toleikis, Tomáš Burian, K. Wieteska, Libor Juha, Ryszard Sobierajski, A.J. Gleeson, K. Tiedtke, W. Wierzchowski, L. Vysin, T. Balcer

Publikováno v: Radiation Physics and Chemistry. 80:1036-1040

An important problem in the experiments performed with the intense fourth generation X-ray sources is the damages of the examined samples caused by the high energy impact. The effect introduced by the beam from the FLASH source in crystalline silicon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a63f7c8c3148714a6af2d6f19471a2f9
https://doi.org/10.1016/j.radphyschem.2011.02.034

Observation of idividual dislocations in 6H and 4H SiC by means of back-reflection methods of X-ray diffraction topography

Autor: W. Wierzchowski, K. Wieteska, W. Hofman, W. Graeff, A. Malinowska, T. Balcer

Publikováno v: Crystal research and technology 42, 1359-1363 (2007). doi:10.1002/crat.200711032
5th International Conference on Solid State Crystals and 8th Polich Conference on Crystal Growth, ICSSC-5 and PCCG-8, Zakopane, Poland, 2007-05-20-2007-05-24

SiC crystals of high structural perfection were investigated with several methods of X-ray diffraction topography in Bragg-case geometry. The methods included section and projection synchrotron white beam topography and monochromatic beam topography.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7904b08067992346b6a2a2d4bf2887f
https://bib-pubdb1.desy.de/record/82175

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