Zobrazeno 1 - 10
of 63
pro vyhledávání: '"T. B. Popova"'
Autor:
V. I. Vasil’ev, A. E. Marichev, D. Yu. Kazantsev, R. V. Levin, D. V. Chistyakov, G. S. Gagis, V. I. Kuchinskii, A. S. Vlasov, M. P. Scheglov, T. B. Popova, B. V. Pushnyi, Yu. Kudriavtsev, B. Ya. Ber
Publikováno v:
Semiconductors. 53:1472-1478
GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers amount to about 1 μm. For Ga1 –xInxP1 –yAsy solid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789fcc671df841550b64404cdf34ab53
https://doi.org/10.1134/s106378261911006x
https://doi.org/10.1134/s106378261911006x
Autor:
V. I. Kuchinskii, M. P. Scheglov, T. B. Popova, D. Yu. Kazantsev, A. S. Vlasov, R. V. Levin, B. Ya. Ber, V. I. Vasil’ev, G. S. Gagis, D. V. Chistyakov, A. E. Marichev
Publikováno v:
Technical Physics Letters. 45:1031-1034
Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a102d9aa2246b83c2b86a63eac06df50
https://doi.org/10.1134/s1063785019100213
https://doi.org/10.1134/s1063785019100213
Autor:
M. B. Karavaev, T. B. Popova, Maria V. Zamoryanskaya, Demid A. Kirilenko, I. V. Sedova, A. A. Sitnikova, E. V. Ivanova
Publikováno v:
Semiconductors. 51:54-60
Wide-gap ZnSe-based nanoheterostructures grown by molecular-beam epitaxy are studied by local cathodoluminescence and X-ray microanalysis. It is shown that the used methods allow nondestructive determination of the depth, elemental composition, and g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126688a7840a47bf5e4e0e3695c91220
https://doi.org/10.1134/s1063782617010080
https://doi.org/10.1134/s1063782617010080
Autor:
R. V. Levin, V. I. Vasil’ev, B. Ya. Ber, A. N. Gorokhov, V. I. Kuchinskii, M. P. Scheglov, G. S. Gagis, D. Yu. Kazantsev, B. V. Pushnyi, T. B. Popova, A. E. Marichev
Publikováno v:
Technical Physics Letters. 44:1127-1129
Gradual variation of the content y of Group-V components by Δy of up to 0.08 across the thickness (600–850 nm) of an epitaxial layer has been observed for Ga1 – xInxAsyP1 – y solid solutions (x = 0.86, y = 0.07–0.42) produced on InP by metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecba049cf21e3b0b5bd40e0c19f1eaa1
https://doi.org/10.1134/s1063785018120593
https://doi.org/10.1134/s1063785018120593
Publikováno v:
Journal of Physics: Conference Series. 1482:012036
It is necessary to minimize the resistance of electrical contacts to reduce heat losses in photovoltaic converters of laser radiation. The paper describes ways to reduce the resistance of electrical contacts for p-InP by choosing the composition of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98917b7393b66e9450bc02471de3617e
https://doi.org/10.1088/1742-6596/1482/1/012036
https://doi.org/10.1088/1742-6596/1482/1/012036
Autor:
T. B. Popova, K. M. Makeev, E. V. Ivanova, L. I. Derkachenko, V. N. Gurin, A. A. Kuzanyan, Mikhail P. Volkov, Armen S. Kuzanyan
Publikováno v:
Technical Physics Letters. 42:1-3
Single crystals of polyelemental rare earth hexaborides with the preset formula La0.5(Ce0.1Pr0.1Nd0.1Sm0.1Eu0.1)B6 were obtained for the first time. Synthesis and crystallization were performed by the solution–melt method in an immiscible Al/Pb sys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787f2bad36106a82eeaaa61776a762f1
https://doi.org/10.1134/s1063785016010120
https://doi.org/10.1134/s1063785016010120
Publikováno v:
Technical Physics Letters. 40:199-202
The so-called crystallization courtyard is investigated that forms in processes of mass crystallization around the Ge and Si crystals and their solid solutions (Ge+Si) during cooling of hypereutectic alloys in the Ge-Al, Si-Al, and (Ge+Si)-Al eutecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bad5271f32123dcca5390b5e34a3291
https://doi.org/10.1134/s1063785014030055
https://doi.org/10.1134/s1063785014030055
Publikováno v:
Semiconductors. 45:260-264
A technique of the electron probe microanalysis of semiconductor heterostructures consisting of nanolayers is described. Features of the microanalysis of such structures are compared to the analysis of structures with thicker layers and of homogeneou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be009414e247169406a042eb7e031bd1
https://doi.org/10.1134/s1063782611020163
https://doi.org/10.1134/s1063782611020163
Autor:
E. P. Marukhina, A. E. Marichev, M. P. Scheglov, G. S. Gagis, B V Pushnyii, D. Yu. Kazantsev, R. V. Levin, T. B. Popova, I V Vasil’ev, B. Ya. Ber
Publikováno v:
Journal of Physics: Conference Series. 1135:012076
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b836a31533c1e3c4bbf098cc7a97956
https://doi.org/10.1088/1742-6596/1135/1/012076
https://doi.org/10.1088/1742-6596/1135/1/012076
Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis
Autor:
D. A. Vinokurov, A. A. Shakhmin, Ya. V. Kuznetsova, Maria V. Zamoryanskaya, T. B. Popova, A.N. Trofimov
Publikováno v:
Journal of Electronic Materials. 39:620-624
Complementary nondestructive electron probe methods were used for characterization of semiconductor multilayer structures. We used cathodoluminescence and electron probe microanalysis for studying laser heterostructures based on GaAs/AlGaAs/InGaAs/Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad33f00d4762b9f0faf95b1a5a22e8a5
https://doi.org/10.1007/s11664-010-1217-1
https://doi.org/10.1007/s11664-010-1217-1