Zobrazeno 1 - 2
of 2
pro vyhledávání: '"T. B. O. Rockett"'
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract A series of gallium arsenide bismide device layers covering a range of growth conditions are thoroughly probed by low-temperature, power-dependent photoluminescence measurements. The photoluminescence data is modelled using a localised state
Externí odkaz:
https://doaj.org/article/917286504a3e4248a838c9b0747cef65
Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature.
Autor:
R D Richards, T B O Rockett, M R M Nawawi, F Harun, A Mellor, T Wilson, C Christou, S Chen, J P R David
Publikováno v:
Semiconductor Science & Technology; Sep2018, Vol. 33 Issue 9, p1-1, 1p