Zobrazeno 1 - 10
of 29
pro vyhledávání: '"T. Angeletos"'
Publikováno v:
Journal of Materials Science. 57:5507-5517
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21d49f3c04ace32ebef0303bf257bd78
https://doi.org/10.1007/s10853-021-06784-3
https://doi.org/10.1007/s10853-021-06784-3
Autor:
G. Antonaras, T. Angeletos, Stavros-Richard G. Christopoulos, Alexander Chroneos, C. A. Londos, M. S. Potsidi
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:930-934
We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (Ci) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of Ci(SiI) defects a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51069b55923fda2114ef4694fb8b3f9d
https://doi.org/10.1007/s10854-019-02602-4
https://doi.org/10.1007/s10854-019-02602-4
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:15345-15355
We investigate neutron irradiation-induced defects in p-type Czochralski silicon (Cz–Si) subjected initially to heat treatments under high hydrostatic pressure (HTHP), by means of infrared spectroscopy (IR). A pair of bands at 592 and 883 cm−1 ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c6149262c070e98dac320ff790b71ef
https://doi.org/10.1007/s10854-019-01909-6
https://doi.org/10.1007/s10854-019-01909-6
Publikováno v:
Materials Science in Semiconductor Processing. 75:283-287
We report infrared (IR) spectroscopy studies on defects in carbon containing neutron irradiated Czochralski grown silicon (Cz-Si). Prior to irradiation the material was subjected to high temperature treatments (HT) at 1000 °C. Two weak bands at 842
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5b49f28dc2c678f02200099cffd7151
https://doi.org/10.1016/j.mssp.2017.11.044
https://doi.org/10.1016/j.mssp.2017.11.044
IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:10298-10312
Oxygen (O) and carbon (C) are key impurities in silicon (Si) and the control of their properties and behavior is an important issue for the microelectronic industry. A number of these properties can be manipulated by isovalent doping. Here we employ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5e0820b05dea938c5b86b479197aaa3
https://doi.org/10.1007/s10854-017-6798-5
https://doi.org/10.1007/s10854-017-6798-5
Publikováno v:
Journal of Materials Science: Materials in Electronics. 27:2054-2061
Nitrogen is a key dopant in Czochralski silicon widely used to control properties of Si wafers for applications in the microelectronics industry. Most of these properties are affected by defects and their processes. Here we employ Fourier transform i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::527824d219db417a7cad60223dbe3d5b
https://doi.org/10.1007/s10854-015-3991-2
https://doi.org/10.1007/s10854-015-3991-2
Publikováno v:
Journal of Materials Science: Materials in Electronics. 26:2248-2256
Carbon and oxygen associated defects such as VO, CiOi and CiCs are common in electron irradiated silicon. Their presence can affect the material and electronic properties of Si. A way to limit their impact and understand their behavior is through dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de50d23440f716ef988592397cc65a5
https://doi.org/10.1007/s10854-015-2677-0
https://doi.org/10.1007/s10854-015-2677-0
Publikováno v:
Journal of Materials Science: Materials in Electronics. 25:5441-5445
Previous infrared spectroscopy studies of the defect spectrum of neutron irradiated Czochralski grown silicon (Cz-Si) revealed a band at 533 cm−1, which disappears from the spectra at ~170 °C and exhibits a similar thermal stability with the Si-P6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c416dbf3b728ef61a31227c37c36508
https://doi.org/10.1007/s10854-014-2326-z
https://doi.org/10.1007/s10854-014-2326-z
Publikováno v:
Journal of Applied Physics. 123:145702
This work reports infrared spectroscopy studies in neutron irradiated Cz-Si containing carbon. The material was thermally treated at high temperature prior to irradiation. The aim was to investigate the production and annealing of the CiOi(SiI) defec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c899a709d09354e76992d7bd8d09814e
https://doi.org/10.1063/1.5024932
https://doi.org/10.1063/1.5024932
Publikováno v:
Journal of Applied Physics. 119:125704
Carbon-oxygen-self-interstitial complexes were investigated in silicon by means of Fourier transform infrared spectroscopy. Upon irradiation, the CiOi defect (C3) forms which for high doses attract self-interstitials (SiIs) leading to the formation o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a010f9f86df9d9891e7cae8bf3999033
https://doi.org/10.1063/1.4945110
https://doi.org/10.1063/1.4945110