Zobrazeno 1 - 10
of 41
pro vyhledávání: '"T. Ambridge"'
Publikováno v:
Journal of Small Animal Practice. 64:343-349
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0b225b81cd279c8de63ff064b159c81
https://doi.org/10.1111/jsap.13586
https://doi.org/10.1111/jsap.13586
Autor:
Jacob T. Ambridge, Sei Ming Lee, Christopher J. Palgrave, Jenny McKay, Pamela A. Kelly, Alan T. Stevens
Publikováno v:
Journal of the American Veterinary Medical Association. 260(2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85ffc87f42b7e3b7d508ec95759efe23
https://pubmed.ncbi.nlm.nih.gov/34843436
https://pubmed.ncbi.nlm.nih.gov/34843436
Publikováno v:
Journal of Applied Physics. 58:260-263
The quantitative analysis of arsenic‐implanted silicon using the novel technique of synchrotron radiation x‐ray fluorescence (SRXF) is reported. An extension of x‐ray fluorescence (XRF) theoretical correction factors to the Gaussian impurity di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94399c13630155fb9c6e1ee465256ab9
https://doi.org/10.1063/1.335721
https://doi.org/10.1063/1.335721
Autor:
M. M. Faktor, T. Ambridge
Publikováno v:
Journal of Applied Electrochemistry. 4:135-142
The depletion layer capacitance of n-type gallium arsenide was measured as a function of its anodic potential in an electrochemical cell. It was shown that these measurements can lead to accurate values of carrier concentration, and are compatible wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8044ec0b8b999f3d48e39c5506b251dd
https://doi.org/10.1007/bf00609022
https://doi.org/10.1007/bf00609022
Autor:
M. M. Faktor, T. Ambridge
Publikováno v:
Journal of Applied Electrochemistry. 5:319-328
A fully automatic system which directly plots semiconductor carrier concentration profiles to any required depth is described. An electrolytic Schottky barrier permits simultaneous controlled dissolution and capacitance-voltage measurements. Examples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec80c9bc4f61e580dcbc8b049cf713a
https://doi.org/10.1007/bf00608796
https://doi.org/10.1007/bf00608796
Publikováno v:
Journal of Physics E: Scientific Instruments. 6:326-329
A system is described for the automatic plotting of the electrochemical voltage-log current characteristics of gallium arsenide samples. The plots are in a convenient form for analysis, which allows the electron concentration, and minority carrier di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49bb7e02e0c2f65986d90e06d5fd4679
https://doi.org/10.1088/0022-3735/6/4/005
https://doi.org/10.1088/0022-3735/6/4/005
Autor:
T. Ambridge, R. Heckingbottom
Publikováno v:
Radiation Effects. 17:31-36
The difficulties in obtaining well defined electrically active layers by ion implantation in gallium arsenide, and other bindary compound semiconductors, as compared with silicon, are discussed. An examination from first principles, in terms of the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72a52a34c5c1aeb2ff2989689ecb2647
https://doi.org/10.1080/00337577308232594
https://doi.org/10.1080/00337577308232594
Publikováno v:
Journal of Applied Electrochemistry. 3:1-15
A method for determining the carrier concentration of n-type gallium arsenide by an electrochemical technique is described. The minority carrier diffusion length is also obtained, and using subsidiary measurements the minority carrier lifetime can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f975a72aa0299f19fc0fabcad23a55
https://doi.org/10.1007/bf01119461
https://doi.org/10.1007/bf01119461
Publikováno v:
Applied Physics Letters. 35:347-349
GaAs/AlxGa1−xAs double‐heterostructure layers grown by conventional LPE have been examined by three separate electrical and optical techniques. Some material has exhibited characteristics not previously detected in epilayers grown singly. Our cen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2725249f97e4bf1c6d95e2f472347695
https://doi.org/10.1063/1.91125
https://doi.org/10.1063/1.91125
Autor:
G Carter, T Ambridge
Publikováno v:
Journal of Physics D: Applied Physics. 4:1630-1632
Changes in electrical conductivity of CdS films, deposited under ultra high vacuum and subsequently exposed to hydrogen adsorption, have been measured. From a plot of the rate of conductivity increase against reciprocal absolute temperature, an activ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e462801b2016247f416f5d3796b4af9c
https://doi.org/10.1088/0022-3727/4/10/424
https://doi.org/10.1088/0022-3727/4/10/424