Zobrazeno 1 - 4
of 4
pro vyhledávání: '"T. Al. Morgan"'
Autor:
G. Story, S. Erickson, Gregory J. Salamo, W. Schroeder, Andrian Kuchuk, M. Zamani-Alavijeh, T. Al. Morgan, Mourad Benamara
Publikováno v:
Journal of Crystal Growth. 493:15-19
The growth of stoichiometric barium titanate using molecular beam epitaxy was investigated by providing excess barium during co-deposition of barium, titanium, and oxygen. X-ray photoelectron spectroscopy confirmed that excess barium accumulated at t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88ffc683341c1ad0b64837160ea4cc71
https://doi.org/10.1016/j.jcrysgro.2018.04.023
https://doi.org/10.1016/j.jcrysgro.2018.04.023
Autor:
T. Al. Morgan, William Ted Masselink, Vas. P. Kunets, D. Guzun, Yu. I. Mazur, J. Dobbert, Gregory J. Salamo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:797-800
The generation-recombination noise in doped-channel In0.53Ga0.47As/In0.52Al0.48As/InP micro-Hall devices is characterized using deep level noise spectroscopy. Three noise sources are detected with trap energies of 140, 170 and 40 meV respectively. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6889984cc21e382989160d2db5e98731
https://doi.org/10.1007/s10854-007-9451-x
https://doi.org/10.1007/s10854-007-9451-x
Autor:
Morgan E. Ware, Vasyl P. Kunets, Gregory J. Salamo, Yu. I. Mazur, T. Al. Morgan, C. S. Furrow, Vitaliy G. Dorogan, Vas. P. Kunets, Yusuke Hirono
Publikováno v:
Applied Physics Letters. 101:041106
Intermediate band solar cells were realized using a GaAs (311)A p-i-n junction with Si as both the p- and n-type dopant, where the intermediate band was realized with a stack of InGaAs quantum wires. This quantum wire photovoltaic device demonstrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414e8f5bb2898f9618e39a7f87e524bd
https://doi.org/10.1063/1.4737944
https://doi.org/10.1063/1.4737944
Autor:
Gregory J. Salamo, Vas. P. Kunets, T. Al. Morgan, D. Guzun, Petr M. Lytvyn, Yu. I. Mazur, Vitaliy G. Dorogan, J. L. Shultz, Morgan E. Ware
Publikováno v:
Journal of Applied Physics. 104:103709
Remotely doped In0.35Ga0.65As layers of different coverages 6, 9, 11, and 13 ML were grown by molecular beam epitaxy on (100) GaAs. Quantum dot (QD) nucleation was observed in situ by reflection high-energy electron diffraction at 8 ML growth of In0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d4e397fc80a0b3e69e5917a96469579
https://doi.org/10.1063/1.3020532
https://doi.org/10.1063/1.3020532