Zobrazeno 1 - 10
of 50
pro vyhledávání: '"T Westgaard"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 409:147-151
Results from SINTEF's research on radiation hardness of silicon detectors, thin silicon detectors, silicon drift devices, reach-through avalanche photodiodes, and detectors with thin dead layers are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca77f25a89807b9a1ed6b2d99c812a9
https://doi.org/10.1016/s0168-9002(97)01254-0
https://doi.org/10.1016/s0168-9002(97)01254-0
Autor:
J Mårtensson, Magne Guttormsen, Agneta Oskarsson, T. Westgaard, Lars Carlén, L. Evensen, E.J. van Veldhuizen, Y Murin, Harry J. Whitlow, Bo Jakobsson, A. Siwek, Vladimir Avdeichikov, Lars Westerberg
Publikováno v:
IEEE Transactions on Nuclear Science. 44:629-634
A pilot series of 10 /spl mu/m to 15 /spl mu/m thin silicon detectors has been made for the /spl Delta/E-E telescopes in the CHICSi detector system. This system will operate at the CELSIUS heavy ion storage ring in Uppsala, Sweden. /spl Delta/E-E tel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae34e4a0f77d880e0bf0cd58555d2048
https://doi.org/10.1109/23.603723
https://doi.org/10.1109/23.603723
Autor:
L. Evensen, T. Westgaard
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 392:206-209
A “single-sided” microstrip detector with n-type strip implants in n-type silicon substrate materials has been developed for use in high luminosity vertex tracker experiments. This technology has been chosen to make a detector which will operate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35072190acf2554a4b38d6c071348e78
https://doi.org/10.1016/s0168-9002(97)00218-0
https://doi.org/10.1016/s0168-9002(97)00218-0
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 377:429-434
Silicon microstrip detectors can be biased with polysilicon resistors or Field Effect Transistor (FET) biasing structures. Polysilicon resistors are radiation hard, but using the FET biasing principle reduces processing costs and can give better nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b24f66e5af77681decb71ca19dba1b72
https://doi.org/10.1016/0168-9002(96)00216-1
https://doi.org/10.1016/0168-9002(96)00216-1
Publikováno v:
Scandinavian Journal of Clinical and Laboratory Investigation. 56:725-734
The plasma level of factor XII (FXII) was measured in samples from healthy young men. The activated contact factor was assayed as prekallikrein activator (PKA), as S-2222 amidase, and in radial immunodiffusion tests. By removing the bulk of IgG on pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea513d3923f2f6896efe28b661fa32c3
https://doi.org/10.3109/00365519609088820
https://doi.org/10.3109/00365519609088820
Publikováno v:
Materials Science Forum. :333-338
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98fe6d84ce7fb4677e7333f86c2f645c
https://doi.org/10.4028/www.scientific.net/msf.117-118.333
https://doi.org/10.4028/www.scientific.net/msf.117-118.333
Publikováno v:
Physical Review B. 46:12853-12856
Discrete peaks, which are identibed as the excited 2s state of the n=1 symmetric heavy-hole exciton, are observed in GaAs/Al x Ga 1-x As symmetric coupled double-quantum-well (SCDQW) samples by combining unpolarized and polarized photoluminescence-ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4659ce205d7a3945957276a5f5a847fa
https://doi.org/10.1103/physrevb.46.12853
https://doi.org/10.1103/physrevb.46.12853
Publikováno v:
Physical Review B. 45:11346-11349
The effect of an electric-field perturbation on excitons bound to Be acceptors in symmetric coupled-double-quantum-well (CDWQ) structures has been studied with photoluminescence (PL) and photoluminescence excitation spectroscopy. The Be acceptors wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a568d27164141c6f6399cec84dbd37d
https://doi.org/10.1103/physrevb.45.11346
https://doi.org/10.1103/physrevb.45.11346
Publikováno v:
Physical Review B. 45:1784-1792
Molecular-beam-epitaxy-manufactured GaAs/${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As symmetric coupled-double-quantum-well (CDQW) structures covering a wide range of coupling strengths have been studied by photoluminescence (PL) and photoluminescenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::430759ecd4e460872c581260c87522d5
https://doi.org/10.1103/physrevb.45.1784
https://doi.org/10.1103/physrevb.45.1784
Autor:
T Westgaard, QX Zhao
Publikováno v:
Physical Review B. 44:3726-3735
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c84fe3b9fbadc77be87d89eeb146f09
https://doi.org/10.1103/physrevb.44.3726
https://doi.org/10.1103/physrevb.44.3726