Zobrazeno 1 - 10
of 13
pro vyhledávání: '"T V Malin"'
Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers
Publikováno v:
Semiconductors. 56:352-359
Publikováno v:
Semiconductors. 56:340-345
Publikováno v:
Technical Physics Letters. 47:692-695
Publikováno v:
Applied Physics Letters. 120:053101
Autor:
S. A. Kochubei, K. S. Zhuravlev, N. N. Rubtsova, V. G. Gol’dort, A. A. Kovalyov, G. M. Borisov, D. V. Ledovskikh, T. V. Malin
Publikováno v:
Siberian Journal of Physics. 13:64-69
Publikováno v:
Journal of Physics: Conference Series; 2018, Vol. 993 Issue 1, p1-1, 1p
Autor:
P. A. Bokhan, N. V. Fateev, I. V. Osinnykh, T. V. Malin, Dm. E. Zakrevsky, K. S. Zhuravlev, Xin Wei, Jian Li, Lianghui Chen
Publikováno v:
Journal of Semiconductors; Apr2018, Vol. 39 Issue 4, p1-1, 1p
Autor:
K S Zhuravlev, D V Gulyaev, I A Aleksandrov, T V Malin, V G Mansurov, Yu G Galitsyn, K.A. Konfederatova, Yen-Chun Chen, Wen-Hao Chang
Publikováno v:
Journal of Physics: Conference Series; 2017, Vol. 864 Issue 1, p1-1, 1p
Publikováno v:
Journal of Physics: Conference Series; 2017, Vol. 864 Issue 1, p1-1, 1p
Publikováno v:
Journal of Physics: Conference Series; 2017, Vol. 816 Issue 1, p1-1, 1p