Zobrazeno 1 - 9
of 9
pro vyhledávání: '"T Twan van Lippen"'
Publikováno v:
Physica Status Solidi B, 244(8), 2782-2791. Wiley-VCH Verlag
Size, shape, position control, and self-organized lateral ordering of epitaxial semiconductor quantum dot (QD) arrays are demonstrated. This constitutes the prerequisite for the ultimate control of the electronic and optical properties of man-made se
Publikováno v:
Physica Status Solidi C: Conferences, 3(11), 3869-3872. Wiley-VCH Verlag
4th Int. Conf. on Semiconductor Quantum Dots (QD2006), Chamonix-Mont Blanc (France), May 1-5, 2006
4th Int. Conf. on Semiconductor Quantum Dots (QD2006), Chamonix-Mont Blanc (France), May 1-5, 2006
Excitation power density dependent photoluminescence (PL) measurements of an ensemble of ordered lateral quantum dot (QD) molecules containing on average 4 and 8 QDs are carried out. Asymmetric broadening of the PL spectra is observed with increasing
Publikováno v:
Proceedings of the 13th International Conference on Molecular Beam Epitaxy (MBE 2004), 22-27 August 2004, Edinburgh, U.K., 88-93
STARTPAGE=88;ENDPAGE=93;TITLE=Proceedings of the 13th International Conference on Molecular Beam Epitaxy (MBE 2004), 22-27 August 2004, Edinburgh, U.K.
STARTPAGE=88;ENDPAGE=93;TITLE=Proceedings of the 13th International Conference on Molecular Beam Epitaxy (MBE 2004), 22-27 August 2004, Edinburgh, U.K.
Lateral InAs quantum dot (QD) molecules are created by self-organized anisotropic strain engineering of a (In,Ga)As/GaAs superlattice (SL) template on GaAs (3 1 1)B by molecular beam epitaxy. During stacking the SL template self-organizes into a two-
Autor:
JH Joachim Wolter, Gerrit J. Hamhuis, Takaaki Mano, T Twan van Lippen, Qian Gong, TJ Tom Eijkemans, R Richard Nötzel
Publikováno v:
Journal of Applied Physics, 44(9A), 6829-6832. American Institute of Physics
Temperature-dependent photoluminescence (PL) studies of an ensemble of self-assembled (In,Ga)As quantum dots (QDs) on GaAs (100) provide insight into the nature of the continuous states between the wetting layer (WL) and QDs. In addition to the well-
Publikováno v:
Journal of Crystal Growth, 301-302(1), 701-704. Elsevier
Complex laterally ordered architectures of InGaAs quantum dot (QD) arrays are created by self-organized anisotropic strain engineering guided through steps generated on shallow mesa-patterned GaAs (3 1 1)B substrates. On stripe-patterned substrates t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::031fa149e9d728072ad2550bc257a03a
https://research.tue.nl/nl/publications/941e46bb-ddfe-4f11-b671-4fdedcc3c66e
https://research.tue.nl/nl/publications/941e46bb-ddfe-4f11-b671-4fdedcc3c66e
Publikováno v:
SPIE Proceedings.
Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized anisotropic strain engineering of a (In,Ga)As/GaAs superlattice (SL) template on GaAs (311)B by molecular beam epitaxy (MBE). During stacking the SL templa
Autor:
JH Joachim Wolter, Jos E. M. Haverkort, T Twan van Lippen, Frank P.J de Groote, R Richard Nötzel
Publikováno v:
Physica E: Low-Dimensional Systems & Nanostructures, 17(1-4), 26-30. Elsevier
We investigate micro-photoluminescence spectra of arrays of locally homogeneous quantum dots (QDs). Our spectra indicate that the QDs exhibit excellent homogeneity in size on a length scale extending up to several microns. Using a Hartree–Fock base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d3ae7171a0f7f2abdf7a16fa6f2ad44
https://research.tue.nl/nl/publications/1a473648-17ce-4609-9f65-1c6da66649bd
https://research.tue.nl/nl/publications/1a473648-17ce-4609-9f65-1c6da66649bd
Publikováno v:
Applied Physics Letters, 80(2), 264-266. American Institute of Physics
The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa1−xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2555669bf6b7ca91ef5651458c95f36c
https://research.tue.nl/nl/publications/c32fa051-188c-438f-a1d7-0744acfe86f9
https://research.tue.nl/nl/publications/c32fa051-188c-438f-a1d7-0744acfe86f9
Publikováno v:
Journal of Vacuum Science and Technology, B, 23(4), 1693-1699. AVS Science and Technology Society
Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized anisotropic strain engineering of a (In,Ga)As/GaAs superlattice (SL) template on GaAs (311)B by molecular beam epitaxy. During stacking the SL template sel