Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Autor: G. Antoun, T. Tillocher, P. Lefaucheux, J. Faguet, K. Maekawa, R. Dussart

Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)

Abstract Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrome

Externí odkaz: https://doaj.org/article/0a7f4f228c87483582d3a8e6f0585dd8

High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films

Autor: M. Kulsreshath, A. Vital, P. Lefaucheux, C. Sinturel, T. Tillocher, M. Vayer, M. Boufnichel, R. Dussart

Publikováno v: Micro and Nano Engineering, Vol 1, Iss , Pp 42-48 (2018)

Cryogenic plasma deep-etching for silicon sub-micron structures was studied with the use of modified poly(styrene) (PS) perforated masks obtained from laterally phase separated PS and poly (lactic acid) PLA blend thin films. PS mask was stained by he

Externí odkaz: https://doaj.org/article/e82f07428e0f4011912d982d22f23f86

Cryogenic etching of silicon compounds using a CHF3 based plasma

Autor: R. Dussart, R. Ettouri, J. Nos, G. Antoun, T. Tillocher, P. Lefaucheux

Publikováno v: Journal of Applied Physics. 133:113306

Cryogenic etching of a-Si, SiO2, and Si3N4 materials by CHF3/Ar inductively coupled plasma is investigated in a range of temperature from −140 to +20 °C. Samples of the three different materials are placed together on the same silicon carrier wafe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5622ce90e372800581493a6bf2dddaef
https://doi.org/10.1063/5.0142056

Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Autor: P. Lefaucheux, T. Tillocher, Remi Dussart, J. Faguet, G. Antoun, K. Maekawa

Publikováno v: Scientific Reports
Scientific Reports, Nature Publishing Group, 2021, 11 (1), pp.357. ⟨10.1038/s41598-020-79560-z⟩
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)

Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d28eb2e9bd2616f552fcbd8743617a6
https://doi.org/10.1038/s41598-020-79560-z

The role of physisorption in the cryogenic etching process of silicon

Autor: P. Lefaucheux, Aurélie Girard, T. Tillocher, S. Tahara, Christophe Cardinaud, G. Antoun, Remi Dussart, Kaoru Maekawa, J. Faguet, K. Yatsuda, K. Yamazaki

Publikováno v: Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SEEB03. ⟨10.7567/1347-4065/ab1639⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78862ff00f94693581891052130ed8be
https://hal.archives-ouvertes.fr/hal-02139391