Zobrazeno 1 - 10
of 10
pro vyhledávání: '"T S Tabarov"'
Publikováno v:
Technical Physics Letters. 44:1013-1016
Photovoltaic characteristics of heterostructure AlxGa1 – xAs/GaAs p–i–n photodiodes fabricated by molecular-beam epitaxy have been studied. Efficiencies of 50% were reached in conversion of monochromatic light in the photovoltaic mode at power
Autor:
V S Kalinovskiy, E. V. Kontrosh, Stefan Ivanov, A N Sumarokov, G. V. Klimko, G A Gusev, V. S. Yuferev, T S Tabarov, Viacheslav M. Andreev
Publikováno v:
Journal of Physics: Conference Series. 993:012029
Simulation of the structure of multijunction photodiodes has been performed on the assumption that an equal of the number of photons is absorbed in them, and PV characteristics have been stadied AlxGa1-xAs/GaAs photodiodes fabricated by the molecular
Autor:
Kalinovskii, V. S.1 (AUTHOR) vitak.sopt@mail.ioffe.ru, Kontrosh, E. V.1 (AUTHOR), Klimko, G. V.1 (AUTHOR), Ivanov, S. V.1 (AUTHOR), Yuferev, V. S.1 (AUTHOR), Ber, B. Y.1 (AUTHOR), Kazantsev, D. Y.1 (AUTHOR), Andreev, V. M.1 (AUTHOR)
Publikováno v:
Semiconductors. Mar2020, Vol. 54 Issue 3, p355-361. 7p.
Autor:
Kalinovskii, V. S.1 vitak.sopt@mail.ioffe.ru, Kontrosh, E. V.1, Klimko, G. V.1, Tabarov, T. S.1, Ivanov, S. V.1, Andreev, V. M.1
Publikováno v:
Technical Physics Letters. Nov2018, Vol. 44 Issue 11, p1013-1016. 4p.
Autor:
Bobrenko, Yu.1, Pavelets, S.1 pavelets@voliacable.com, Pavelets, A.1, Semikina, T.1, Yaroshenko, N.1
Publikováno v:
Semiconductors. Apr2015, Vol. 49 Issue 4, p519-523. 5p.
Publikováno v:
Semiconductors. Oct2013, Vol. 47 Issue 10, p1372-1375. 4p.
Autor:
Danil'chenko, V.1, Korol'kov, V.1, Ponomarev, S.1, Soldatenkov, F.1 f.soldatenkov@mail.ioffe.ru
Publikováno v:
Semiconductors. Apr2011, Vol. 45 Issue 4, p515-518. 4p.
Publikováno v:
Semiconductors. Aug2003, Vol. 37 Issue 8, p894-914. 21p.
Publikováno v:
Critical Reviews in Solid State & Materials Science; Mar2006, Vol. 31 Issue 1/2, p1-13, 13p, 4 Diagrams, 3 Graphs
Autor:
E. Lendvay
Proceedings of the 2nd International Conference on Physics & Technology of GaAs and other III-V Semiconductors, Budapest, Hungary, 1986