Zobrazeno 1 - 10
of 17
pro vyhledávání: '"T S Kamilov"'
Autor:
T. S. Kamilov, A. S. Rysbaev, V. V. Klechkovskaya, A. S. Orekhov, Sh. Kh. Dzhuraev, A. S. Kasymov
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 2, Iss 4, Pp 360-366 (2021)
The paper considers the influence of a transition amorphous layer at the interface between the higher manganese silicide (HMS) Mn 4 Si 7 and silicon doped with manganese (Si ) on the photoelectric properties of heterostructures. The role of the initi
Externí odkaz:
https://doaj.org/article/0ced00b9d18845c8bc4891a2546edfe4
Publikováno v:
International Journal of Modern Physics B. 37
There arises the formation of thin films of cobalt monosilicide (CoSi) deposited into the base surface of SiO2/Si (111) using magnetron ion-plasma sputtering and subsequent thermal annealing. It was found that, in addition to the formation of CoSi si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc198644836cc77153d8e4cbf1bb03bb
https://doi.org/10.1142/s0217979223501643
https://doi.org/10.1142/s0217979223501643
Autor:
T. S. Kamilov, Vera V. Klechkovskaya, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Andrey S. Orekhov
Publikováno v:
Applied Solar Energy. 55:380-384
The effect of the amorphous transition layer at the interface between Mn4Si7 and silicon doped with manganese on the photoelectric properties of heterostructures is considered. It is found that the precipitated Mn atoms on the silicon surface are gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::996ca58ae8faa2864a1acf27155dc3b3
https://doi.org/10.3103/s0003701x19060057
https://doi.org/10.3103/s0003701x19060057
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 2, Iss 4, Pp 360-366 (2018)
The paper considers the influence of a transition amorphous layer at the interface between the higher manganese silicide (HMS) Mn 4 Si 7 and silicon doped with manganese (Si ) on the photoelectric properties of heterostructures. The role of the initi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fb0499eb0552f5fb07ea88161450699
Autor:
E. V. Rakova, T. S. Kamilov, N. A. Arkharova, Vera V. Klechkovskaya, Andrey S. Orekhov, Anton S. Orekhov
Publikováno v:
Nanotechnologies in Russia. 11:610-616
The structure and composition of higher manganese silicide (HMS) films on Si(111) substrate are studied by high-resolution transmission electron microscopy, electron diffraction, and energy-dispersive X-ray spectroscopy. The formation of Mn4Si7 HMS f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0589b3bf51338dae672569d714c35bfa
https://doi.org/10.1134/s1995078016050128
https://doi.org/10.1134/s1995078016050128
Publikováno v:
Semiconductors. 49:1281-1284
The features of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions are investigated at low temperatures and upon “intrinsic” illumination with hv > 1.12 eV. It is shown that low-frequency self-oscillations rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bf589ec0d87e4fd5c987bc374f18388
https://doi.org/10.1134/s1063782615100097
https://doi.org/10.1134/s1063782615100097
The structural features of higher manganese-silicide films obtained by the diffusion doping of single-crystal silicon substrates with manganese vapor in a sealed cell and a flow-through quartz reactor with continuous pumping are comparatively analyze
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52c613badb329681ac2b0d126a883888
https://hdl.handle.net/20.500.12445/336
https://hdl.handle.net/20.500.12445/336
Publikováno v:
Technical Physics. 59:1833-1838
The photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures are studied. It is shown that, at low temperatures, the high-ohmic base region of the HMS-Si〈Mn〉-HMS or HMS-Si〈Mn〉-M stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8912f3fcf2063d4b64167fafc8c05f9c
https://doi.org/10.1134/s106378421412010x
https://doi.org/10.1134/s106378421412010x
Publikováno v:
Technical Physics. 58:1182-1188
The kinetics of photocurrent is studied in the presence of the intrinsic irradiation at hν ≥ 1.12 eV in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions at relatively high applied voltages. It is demonstrated that photocurrent,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc0dfed2c9cc89d4ad0ab56dbfa9701d
https://doi.org/10.1134/s106378421308015x
https://doi.org/10.1134/s106378421308015x
Publikováno v:
Technical Physics. 56:1423-1428
The current-voltage characteristics of Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes are studied experimentally. The current passage mechanism under illumination with hν ≥ Eg is considered. The role of a contact to Mn4Si7 in the pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcede4678ed0c3a6ec313da5ec1245a5
https://doi.org/10.1134/s1063784211100185
https://doi.org/10.1134/s1063784211100185