Zobrazeno 1 - 10
of 18
pro vyhledávání: '"T N, L'vova"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 257:222-226
Dynamics of recrystallization of implanted silicon surface has been investigated using an in situ diffraction method. The method is based on registering the diffraction signal from a special periodic structure formed by ion implantation. The change o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9553ac71821e473d638e37aefda62e3
https://doi.org/10.1016/j.nimb.2007.01.270
https://doi.org/10.1016/j.nimb.2007.01.270
Autor:
Ya. V. Fattakhov, D.I. Proskurovsky, Il'dus B. Khaibullin, T. N. L’vova, Sergii Romanenko, V. A. Kagadei, E. V. Nefedtsev, M. V. Zakharov, K. V. Oskomov
Publikováno v:
Semiconductors. 40:59-63
The effect of intense atomic hydrogen flux on the defect density in the surface layer of single-crystal silicon is studied. It is shown that the formation of local molten regions by pulsed-light heating of Si samples and further analysis of the local
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::845d13dd91de1e326838222fe1a6687b
https://doi.org/10.1134/s1063782606010106
https://doi.org/10.1134/s1063782606010106
Publikováno v:
Vacuum. 63:649-655
The in situ investigations of anisotropic local melting of implanted and monocrystalline silicon during irradiation by powerful light pulses using a high-speed camera are presented. The methods of formation of special diffraction gratings are present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3f09bd1eb1495e705e6aa4331fa5491
https://doi.org/10.1016/s0042-207x(01)00253-6
https://doi.org/10.1016/s0042-207x(01)00253-6
Publikováno v:
Quantum Electronics. 30:597-600
The dynamics of anisotropic local melting of monocrystalline semiconductors irradiated by intense pulses of coherent and incoherent light is studied. The time dependences of the size and the density (per unit area) of local melting region obtained in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60cdc65c246458629cdedb4c346df0ec
https://doi.org/10.1070/qe2000v030n07abeh001773
https://doi.org/10.1070/qe2000v030n07abeh001773
Publikováno v:
Optics and Spectroscopy. 89:136-142
New methods for the formation of measuring periodic diffraction structures at silicon surfaces are proposed and tested. The one-dimensional grating is formed at a surface of implanted silicon by nanosecond laser annealing in the regime of interferenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36f571524e67cb41f6d77efd87dd8dd3
https://doi.org/10.1134/bf03356003
https://doi.org/10.1134/bf03356003
Publikováno v:
Journal of Physics: Condensed Matter. 12:L393-L397
The first results of a dynamics investigation of the effect of anisotropic local melting of semiconductors observed under irradiation by powerful light pulses are presented. In situ time dependences of the sizes and density (quantity per cm-2) of loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9ada11cc333f376d504a516c298e52
https://doi.org/10.1088/0953-8984/12/25/102
https://doi.org/10.1088/0953-8984/12/25/102
Publikováno v:
Vacuum. 51:255-259
One of the effects observed in the irradiation of semiconductors by powerful pulses of coherent and incoherent light sources in the range of durations from 0.2 ms to 10 s is the effect of anisotropic local melting. It allows valuable physical informa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9882c178e08fea5369418a9ced40532d
https://doi.org/10.1016/s0042-207x(98)00170-5
https://doi.org/10.1016/s0042-207x(98)00170-5
Autor:
B. V. Tsarenkov, E. B. Novikov, V. I. Safarov, V. L. Berkovits, T. N. L’vova, Vasily N. Bessolov, R. V. Khasieva
Publikováno v:
Journal of Applied Physics. 70:3707-3711
Reflectance anisotropy spectrometry is used to study the electronic properties of sulfide‐passivated GaAs. The optical technique allows measurement of the Fermi‐level displacement at the surface in situ, while the sample is immersed into a sulfid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9d3580d703b4ab2ca3b3e85ea242d05
https://doi.org/10.1063/1.349221
https://doi.org/10.1063/1.349221
Publikováno v:
Technical Physics. 42:1457-1459
The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c39d3710d4a6fdcad3799e64d44ec50d
https://doi.org/10.1134/1.1258902
https://doi.org/10.1134/1.1258902
Publikováno v:
High Power Lasers — Science and Engineering ISBN: 9789048146796
One of the interesting physical effects observed at the interaction of powerful optical irradiation with substance is the the effect of anisotropic local melting of the surface of semicondurtors [1–6].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a37da9415e48843bd71b56adfd6e99
https://doi.org/10.1007/978-94-015-8725-9_34
https://doi.org/10.1007/978-94-015-8725-9_34
