Zobrazeno 1 - 9
of 9
pro vyhledávání: '"T M H Wong"'
Autor:
T M H Wong, Mark E. Welland
Publikováno v:
Measurement Science and Technology. 4:270-280
The authors present a flexible, high performance digital feedback and scanning system for the control of both scanning tunnelling microscopy (STM) and atomic force microscopy (AFM) which they have shown is capable of taking atomically resolved images
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::916f2e52a274dc3b7d78d4ec385d307e
https://doi.org/10.1088/0957-0233/4/3/004
https://doi.org/10.1088/0957-0233/4/3/004
Autor:
A. Feng, V. V. Souchkov, T. M. H. Wong, V. N. Faifer, M. I. Current, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
A 50 μm metal probe has been combined with pattern recognition optics and a 3‐directional precision stage for automated CV and IV testing of dielectric layers in scribe‐line test structures on IC product wafers. Highly repeatable contact conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e3fa52728598f58408363770379ea9f
https://doi.org/10.1063/1.2799379
https://doi.org/10.1063/1.2799379
Autor:
V. N. Faifer, D. K. Schroder, M. I. Current, T. Clarysse, P. J. Timans, T. Zangerle, W. Vandervorst, T. M. H. Wong, A. Moussa, S. McCoy, J. Gelpey, W. Lerch, S. Paul, D. Bolze, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
Sheet resistance and leakage current of spike rapid thermal processed (RTP), millisecond flash (fRTP) annealed and chemical vapor deposition (CVD) grown ultra‐shallow junctions (USJ) are compared with a non‐contact junction photovoltage, RsL, tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbba93a6a7618eea584628efd4e05942
https://doi.org/10.1063/1.2799377
https://doi.org/10.1063/1.2799377
Publikováno v:
AIP Conference Proceedings.
Junction photo‐voltage methods are used to measure sheet resistance and recombination leakage current effects in ultra‐shallow junctions formed with low‐energy Boron implants annealed with ms‐timescale thermal cycles at ∼1300 C. The impact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65d9ea253e78294c1bca1ac424f665f4
https://doi.org/10.1063/1.2401585
https://doi.org/10.1063/1.2401585
Publikováno v:
Extended Abstracts of the Fifth International Workshop on Junction Technology.
A powerful new tool for non-contact analysis of sheet resistance and leakage current in p-n junctions, based on junction photo-voltage analysis of carrier recombination, carrier spreading and loss in the junction, has been developed. The method has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c119434665ddfabcc5f1bef17e6686fb
https://doi.org/10.1109/iwjt.2005.203876
https://doi.org/10.1109/iwjt.2005.203876
Publikováno v:
AIP Conference Proceedings.
Non‐contact measurements of p‐n junction photo‐voltage give direct measures of sheet resistance and leakage current (RsL) over the entire process range of CMOS doping. Efficient measurement of leakage current on un‐patterned monitor wafers en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cc2cb52a913b8684b55e4e7bb4ac4be
https://doi.org/10.1063/1.2062972
https://doi.org/10.1063/1.2062972
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98fea21410dcb1ac52dfa8667d72e2c1
https://doi.org/10.7567/ssdm.1993.s-iii-6
https://doi.org/10.7567/ssdm.1993.s-iii-6
Autor:
T. Clarysse, Alain Moussa, D. K. Schroder, Silke Paul, P. J. Timans, J. Gelpey, Michael I. Current, S. McCoy, T. Zangerle, Vladimir Faifer, W. Vandervorst, Wilfried Lerch, J. Halim, T. M. H. Wong, D. Bolze
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:1588
Sheet resistance and leakage current density of spike rapid thermal processed, millisecond flash annealed, and chemical vapor deposition (CVD) grown ultrashallow junctions (USJs) are compared with the contactless junction photovoltage technique for m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc6eabeb0b8797013cd83040c008937
https://doi.org/10.1116/1.2771552
https://doi.org/10.1116/1.2771552
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:414
Noncontact measurements of p-n junction photo-voltage give direct measures of sheet resistance and leakage current over the entire range of CMOS doping process. Efficient measurement of leakage current on un-patterned monitor wafers enables the pract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a0e763bccda25b5ca83ea033e40c573
https://doi.org/10.1116/1.2137334
https://doi.org/10.1116/1.2137334