Zobrazeno 1 - 10
of 13
pro vyhledávání: '"T J Gosling"'
Publikováno v:
Modelling and Simulation in Materials Science and Engineering. 4:581-596
A three-dimensional (3D) dislocation simulation has been developed in the last few years in order to fill the gap between atomistic simulations and the more macroscopic approaches. The specific role of such a simulation is to combine all mechanisms r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db65a56fa2a6017912177c858e5ace8
https://doi.org/10.1088/0965-0393/4/6/003
https://doi.org/10.1088/0965-0393/4/6/003
Autor:
T. J. Gosling
Publikováno v:
Philosophical Magazine A. 73:11-45
Exact closed-form solutions are derived for the stresses due to periodic arrays of dislocations and arbitrarily polygonal inclusions of infinite length in a generally anisotropic half space. These solutions allow the analysis of the stability of a ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d9a2c440b1ec1b6fd63d96387b6446b
https://doi.org/10.1080/01418619608242966
https://doi.org/10.1080/01418619608242966
Autor:
J. R. Willis, T. J. Gosling
Publikováno v:
Journal of Applied Physics. 77:5601-5610
A closed‐form solution is presented for the stresses induced in an infinite elastic body by a periodic array of misfitting inclusions. This solution is used to study the mechanical and electronic properties of buried arrays of [110]‐oriented stra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cacde783de6c757f8eb46c865a1b748a
https://doi.org/10.1063/1.359202
https://doi.org/10.1063/1.359202
Publikováno v:
Physica Status Solidi (a). 146:713-734
A scheme is proposed within which the elements of dislocation propagation, interaction, nucleation, and multiplication may be combined to yield a model of strain relaxation in lattice-mismatched semiconductor layers. Interaction between perpendicular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50466dc2048c6245dc3036148421f570
https://doi.org/10.1002/pssa.2211460217
https://doi.org/10.1002/pssa.2211460217
Autor:
J. R. Willis, T. J. Gosling
Publikováno v:
Philosophical Magazine A. 69:65-90
Exact closed-form solutions are obtained for the energy of arrays of dislocations lying at the interface between a strained epitaxial layer and substrate that are elastically anisotropic and have the same elastic constants. Closed-form solutions are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dbdfbe8492121e3377eb5424eaae380
https://doi.org/10.1080/01418619408242211
https://doi.org/10.1080/01418619408242211
Autor:
T. J. Gosling
Publikováno v:
Journal of Applied Physics. 74:5415-5420
A rigorous calculation, within the framework of linear continuum elasticity, is performed to evaluate the energy of a rectangular 1/2[101](111) 60° dislocation glide loop nucleated at the site of a pre‐existing 1/2[110](111) 60° dislocation at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a78ebe965077215bb17c5e2557e1a08a
https://doi.org/10.1063/1.354247
https://doi.org/10.1063/1.354247
Publikováno v:
Journal of Applied Physics. 73:8267-8278
An elastic continuum model is used to investigate distributions of misfit dislocations in a capped layer structure. Effects of the free surface at the top of the cap and of interactions between dislocations have been rigorously incorporated, making t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cba88eab230cb9862b13d5312c52fa7
https://doi.org/10.1063/1.353445
https://doi.org/10.1063/1.353445
Publikováno v:
Journal of Applied Physics. 73:8297-8303
Two aspects of the energetics of dislocation array stability in lattice‐mismatched strained layers are addressed. The first concerns criteria for determining equilibrium dislocation distributions in strained layers; the second concerns the differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db4915c722188b8de8a0ff87619c183b
https://doi.org/10.1063/1.354087
https://doi.org/10.1063/1.354087
Publikováno v:
Solid-State Electronics. 35:1073-1079
A theoretical comparison of the stability characteristics of capped and uncapped GexSi1−x strained layers is performed, using exact expressions for the energy of orthogonal, periodic arrays of misfit dislocations in both cases. The critical thickne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0525d409417722d002030ca0f663df6d
https://doi.org/10.1016/0038-1101(92)90007-y
https://doi.org/10.1016/0038-1101(92)90007-y
Publikováno v:
Philosophical Magazine A. 66:119-132
Two guiding principles for the determination of stable configurations in strained epitaxial layers (epilayers) are considered. One states that dislocations will be introduced so that the epilayer attains the lowest-energy configuration. The other con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcff8b5926301cd379a4b904bda5c76a
https://doi.org/10.1080/01418619208201517
https://doi.org/10.1080/01418619208201517