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pro vyhledávání: '"T J Bullough"'
Autor:
C Button, R. E. Pritchard, R C Newman, T J Bullough, J S Roberts, B.R. Davidson, J. Wagner, T B Joyce
Publikováno v:
Semiconductor Science and Technology. 10:639-644
H-CAs pairs in epitaxial layers of AlAs have been studied by local vibrational mode (LVM) Raman spectroscopy and complemented by infrared (IR) absorption measurements performed on the same samples. Inelastic light scattering by the symmetric A1+ mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39dbecb75e49ba34173e6a0c10fb67da
https://doi.org/10.1088/0268-1242/10/5/012
https://doi.org/10.1088/0268-1242/10/5/012
