Zobrazeno 1 - 10
of 193
pro vyhledávání: '"T J Bullough"'
Autor:
C Button, R. E. Pritchard, R C Newman, T J Bullough, J S Roberts, B.R. Davidson, J. Wagner, T B Joyce
Publikováno v:
Semiconductor Science and Technology. 10:639-644
H-CAs pairs in epitaxial layers of AlAs have been studied by local vibrational mode (LVM) Raman spectroscopy and complemented by infrared (IR) absorption measurements performed on the same samples. Inelastic light scattering by the symmetric A1+ mode
Autor:
Gamov, I., Hartmann, C., Wollweber, J., Dittmar, A., Straubinger, T., Bickermann, M., Kogut, I., Fritze, H., Irmscher, K.
Publikováno v:
Journal of Applied Physics; 12/7/2019, Vol. 126 Issue 21, p1-7, 7p, 1 Chart, 4 Graphs
Autor:
Kudrawiec, Robert, Walukiewicz, Wladek
Publikováno v:
Journal of Applied Physics; 10/14/2019, Vol. 126 Issue 14, p1-30, 30p, 9 Diagrams, 26 Graphs
Autor:
Bao, A.1 (AUTHOR) ab2115@cam.ac.uk
Publikováno v:
Materials Science & Technology. May2017, Vol. 33 Issue 7, p765-776. 12p.
Publikováno v:
AIP Advances; Jan2022, Vol. 12 Issue 1, p1-7, 7p
Autor:
Roccapriore, Kevin M., Cho, Shin‐Hum, Lupini, Andrew R., Milliron, Delia J., Kalinin, Sergei V.
Publikováno v:
Small; Jan2022, Vol. 18 Issue 1, p1-10, 10p
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 23, p235701-1-235701-8, 8p, 1 Diagram, 1 Chart, 6 Graphs
Autor:
Yadav, Shivesh, Rodríguez-Fernández, Carlos, de Lima, Jr., Mauricio M., Cantarero, Andres, Dhar, Subhabrata
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 22, p225703-1-225703-7, 7p, 2 Black and White Photographs, 8 Graphs
Publikováno v:
Journal of Communications Technology & Electronics; May2021, Vol. 66 Issue 5, p613-621, 9p
Autor:
Tsai, Y., Barman, B., Scrace, T., Fukuda, M., Whiteside, V. R., Sellers, I. R., Leroux, M., Al Khalfioui, M., Petrou, A.
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 4, p045705-1-045705-4, 4p, 6 Graphs