Zobrazeno 1 - 10
of 866
pro vyhledávání: '"T Gessner"'
Publikováno v:
AIP Advances, Vol 6, Iss 8, Pp 085309-085309-6 (2016)
We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage
Externí odkaz:
https://doaj.org/article/1e75098a27d04ea28c2dc096547e2c75
Akademický článek
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Publikováno v:
ECS Transactions. 50:241-251
This paper introduces a method that uses a specific form of local heat generation, which is based on nano scale reactive multilayer systems. Such systems consist of several layers of minimum two different materials with nano scale thicknesses. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ba203d73ba43c74c52d0ce934c19fe
https://doi.org/10.1149/05007.0241ecst
https://doi.org/10.1149/05007.0241ecst
Publikováno v:
ECS Transactions. 52:1041-1046
Micro systems exist as part of daily life almost anywhere - and largely unnoticed. They have also mostly unnoticed, beginning through the last two decades a rapid development, starting from miniaturized single-functional system more and more to a com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2be3876179722b484d153a2103f476c7
https://doi.org/10.1149/05201.1041ecst
https://doi.org/10.1149/05201.1041ecst
Autor:
T. Grossmann, J. Tröltzsch, Martin Wiedemann, L. Kroll, T. Geßner, Tobias Melz, M. Lipowski, M. Schüller
Publikováno v:
Smarte Strukturen und Systeme ISBN: 9783110469240
Smarte Strukturen und Systeme: Tagungsband des 4SMARTS Symposiums vom 6.-7. April 2016 in Darmstadt
Smarte Strukturen und Systeme: Tagungsband des 4SMARTS Symposiums vom 6.-7. April 2016 in Darmstadt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f3e974bb2f635ae65e6a52b966c5d59
https://doi.org/10.1515/9783110469240-015
https://doi.org/10.1515/9783110469240-015
Publikováno v:
Microelectronic Engineering. 87:584-587
This paper presents a novel compact meta-structure microstrip balun, which is characterized by left-handed properties. In the novel structure, two coupled meander lines are used to generate series capacitor and series inductor. Compared with conventi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::471ae8f9eea7e48e323b782795dbeda4
https://doi.org/10.1016/j.mee.2009.08.018
https://doi.org/10.1016/j.mee.2009.08.018
Autor:
T. Gessner, Thomas Waechtler, Stefan E. Schulz, Michael Hietschold, Heinrich Lang, Robert Mothes, Steffen Schulze, Nina Roth
Publikováno v:
ECS Transactions. 25:277-287
The atomic layer deposition (ALD) of copper oxide films from [(nBu3P)2Cu(acac)] and wet oxygen on SiO2 and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO2, along with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d09f04b2517f162b8a8b2d6faed4cc7
https://doi.org/10.1149/1.3205062
https://doi.org/10.1149/1.3205062
Autor:
T. Gessner, Marius Toader, Sascha Hermann, Martin Hartmann, Michael Mertig, Stefan E. Schulz, Linda Scharfenberg
We report the fabrication and characterization of highly dense field-effect-transistor (FET) arrays based on single-walled carbon nanotubes (SWCNTs). The nanotubes were sorted according to the electronic type by using density gradient ultracentrifuga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1e35b5e7cacb3b752ae91a40fff80fb
https://publica.fraunhofer.de/handle/publica/244277
https://publica.fraunhofer.de/handle/publica/244277
Autor:
Cameliu Himcinschi, Alexander G. Milekhin, T. Gessner, Karla Hiller, Marion Friedrich, Steffen Schulze, M. Wiemer, Dietrich R. T. Zahn
Publikováno v:
Semiconductors. 40:1304-1313
Infrared spectra of multiple frustrated total internal reflection and transmission for silicon wafers obtained by direct bonding in a wide temperature range (200–1100°C) are studied. Properties of the silicon oxide layer buried at the interface ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dcf08d1a2fa6ba61c6b8ced4bfdac15
https://doi.org/10.1134/s1063782606110108
https://doi.org/10.1134/s1063782606110108
Fabrication and characterization of buried silicide layers on SOI substrates for BICMOS-applications
Autor:
C. Kaufmann, Qing-Tai Zhao, Siegfried Prof. Dr. Mantl, V. Dudek, Sven Zimmermann, T. Gessner, Maik Wiemer, B. Trui
Publikováno v:
Microelectronic Engineering. 82:454-459
The successful fabrication of a silicon on metal on insulator (SOMI) substrate with a structured buried silicide layer for BICMOS applications is shown in this paper. The cobalt silicide is used as the buried silicide layer in the SOMI substrate beca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455a0e3f7aca7843c214fad8f30f573d
https://doi.org/10.1016/j.mee.2005.07.042
https://doi.org/10.1016/j.mee.2005.07.042