Zobrazeno 1 - 10
of 30
pro vyhledávání: '"T E Felter"'
Autor:
Christian Wetzel, J.W. Tringe, W.J.M. Chan, J. M. Castelaz, Y. Xia, C. G. Stevens, T. E. Felter, Adam M. Conway, Vincenzo Lordi
Publikováno v:
IEEE Transactions on Nuclear Science. 55:3633-3637
InGaN quantum well structures on GaN epilayers were exposed to 500 keV alpha particles to fluences above 1014 cm2 to probe the relative radiation tolerance of the epilayer and wells. Performance was estimated by the intensity of ion-beam induced lumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cee64d11c4b0562a7d27805898a397b6
https://doi.org/10.1109/tns.2008.2006169
https://doi.org/10.1109/tns.2008.2006169
Publikováno v:
Microscopy Today. 14:28-35
The Focused Ion Beam (FIB) instrument, originally designed for semiconductor circuit modification and repair, has found considerable utility as a tool for specimen preparation in several microscopy disciplines and for micromachining small parts. Esse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebf07d1f85f6c632d5ea121e6929e41a
https://doi.org/10.1017/s1551929500058855
https://doi.org/10.1017/s1551929500058855
Autor:
K J Wu, Wigbert J. Siekhaus, Art J. Nelson, James Ferreira, Cheryl L. Evans, William McLean, T E Felter
Publikováno v:
Surface Science. 600:1319-1325
Implantation of 33 keV C{sup +} ions into polycrystalline U{sup 238} with a dose of 4.3 x 10{sup 17} cm{sup -2} produces a physically and chemically modified surface layer that prevents further air oxidation and corrosion. X-ray photoelectron spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fbf24de7a8b55f65391617eb8605753
https://doi.org/10.1016/j.susc.2006.01.025
https://doi.org/10.1016/j.susc.2006.01.025
Autor:
A. Ilinski, Y. Hernandez, Y. Kudriavtsev, Andrey Kosarev, Alfonso Torres, R. Silva-Gonzalez, E. Gomez-Barojas, Carlos Zuniga, A. Abramov, T E Felter, Rene Asomoza, Roberto Ambrosio
Publikováno v:
Journal of Materials Research. 21:88-104
We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b47a9f41a56ddfb08262b0005a89248f
https://doi.org/10.1557/jmr.2006.0013
https://doi.org/10.1557/jmr.2006.0013
Publikováno v:
Thin Solid Films. :43-46
Fused silica and Si–Ox coatings are of interest for use under high flux conditions of laser light. Si–Ox coatings are sputter deposited from silicon and fused quartz targets using planar magnetrons operated in the r.f. mode with a variable workin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0bd5ccaf9566ac019d708349df0d846
https://doi.org/10.1016/s0040-6090(02)00741-1
https://doi.org/10.1016/s0040-6090(02)00741-1
Publikováno v:
Journal of Materials Research. 15:838-841
The local mechanical properties of silica-reinforced silicone composites were investigated using a modified atomic force microscopy technique. Elastic modulus measurements (1.5 ± 0.1 MPa) are consistent with bulk measurements (1.9 MPa), and changes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62eb78f05edd110c076a43cc9b0057fc
https://doi.org/10.1557/jmr.2000.0119
https://doi.org/10.1557/jmr.2000.0119
Characteristics of He + ‐irradiated Ni Schottky diodes based on 4H‐SiC epilayer grown by sublimation
Autor:
Albert V. Davydov, V. V. Zelenin, A. A. Lebedev, Anatoly M. Strel'chuk, C. G. Stevens, T. E. Felter, A. N. Kuznetsov, Joseph W. Tringe
Publikováno v:
physica status solidi c. 6:2876-2878
Forward and reverse current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the of He+ – irradiated Ni-SiC(4H) Schottky diodes (SDs) are presented prior and after irradiation. The effect of irradiation was weakly observed in the regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9744056d924aebd0c5a91a732433e151
https://doi.org/10.1002/pssc.200982584
https://doi.org/10.1002/pssc.200982584
Autor:
T. E. Felter, S. O. Kucheyev
Publikováno v:
Journal of Applied Physics. 95:8475-8477
We study structural disorder produced in tetragonal KH2PO4 (KDP) single crystals at room temperature by irradiation with MeV light ions. Results show that electronic energy loss plays a major role in the production of lattice defects in KDP. The effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d8b8f09702ae003f93e62c64dda810
https://doi.org/10.1063/1.1745117
https://doi.org/10.1063/1.1745117
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2474-2480
We present a high‐resolution low‐energy electron diffraction study of the clean Pt(110) reconstructed (1×2) to (1×1) phase transition and its critical phenomena. The phase transition is shown to be a continuous order–disorder type with critic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9848862c94789bb93fcd1f6fb3133f70
https://doi.org/10.1116/1.576718
https://doi.org/10.1116/1.576718
Autor:
Rene Asomoza, Andrey Kosarev, A. Ilinskii, Y. Kudrjavtsev, L. Sanchez, Alfonso Torres, T E Felter
Publikováno v:
MRS Proceedings. 910
We report on a systematical study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by low frequency PE CVD. Silane and ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e596517e7e1130bf6db170705a07491b
https://doi.org/10.1557/proc-0910-a07-02
https://doi.org/10.1557/proc-0910-a07-02