Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Tóvári, Endre"'
Autor:
Scherübl, Zoltán, Sütő, Máté, Kóti, Dávid, Tóvári, Endre, Horváth, Csaba, Kalmár, Tamás, Vasas, Bence, Berke, Martin, Kirti, Magdhi, Biasiol, Giorgio, Csonka, Szabolcs, Makk, Péter, Fülöp, Gergő
Semiconductor-superconductor hybrid nanocircuits are of high interest due to their potential applications in quantum computing. Semiconductors with a strong spin-orbit coupling and large $g$-factor are particularly attractive since they are the basic
Externí odkaz:
http://arxiv.org/abs/2406.20059
Autor:
Gudarzi, Mohsen Moazzami, Slizovskiy, Sergey, Mao, Boyang, Tóvári, Endre, Pinter, Gergo, Sanderson, David, Asaad, Maryana, Xiang, Ying, Wang, Zhiyuan, Guo, Jianqiang, Spencer, Ben F., Geim, Alexandra A., Fal'ko, Vladimir I., Kretinin, Andrey V.
Understanding and controlling the electrical properties of solution-processed 2D materials is key to further printed electronics progress. Here we demonstrate that the thermolysis of the aromatic intercalants utilized in nanosheet exfoliation for gra
Externí odkaz:
http://arxiv.org/abs/2404.17738
Autor:
Kovács-Krausz, Zoltán, Nagy, Dániel, Márffy, Albin, Karpiak, Bogdan, Tajkov, Zoltán, Oroszlány, László, Koltai, János, Nemes-Incze, Péter, Dash, Saroj P., Makk, Péter, Csonka, Szabolcs, Tóvári, Endre
The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ
Externí odkaz:
http://arxiv.org/abs/2312.10223
Autor:
Wang, Wendong, Clark, Nicholas, Hamer, Matthew, Carl, Amy, Tovari, Endre, Sullivan-Allsop, Sam, Tillotson, Evan, Gao, Yunze, de Latour, Hugo, Selles, Francisco, Howarth, James, Castanon, Eli G., Zhou, Mingwei, Bai, Haoyu, Li, Xiao, Weston, Astrid, Watanabe, Kenji, Taniguchi, Takashi, Mattevi, Cecilia, Bointon, Thomas H., Wiper, Paul V., Strudwick, Andrew J., Ponomarenko, Leonid A., Kretinin, Andrey, Haigh, Sarah J., Summerfield, Alex, Gorbachev, Roman
Publikováno v:
Nature Electronics, 2023
Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers whi
Externí odkaz:
http://arxiv.org/abs/2308.13484
Autor:
Guarochico-Moreira, Victor H., Anderson, Christopher R., Fal'ko, Vladimir, Grigorieva, Irina V., Tóvári, Endre, Hamer, Matthew, Gorbachev, Roman, Liu, Song, Edgar, James H., Principi, Alessandro, Kretinin, Andrey V., Vera-Marun, Ivan J.
Publikováno v:
Phys. Rev. B 108, 115418 (2023)
Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within h
Externí odkaz:
http://arxiv.org/abs/2306.08705
Autor:
Kedves, Máté, Szentpéteri, Bálint, Márffy, Albin, Tóvári, Endre, Papadopoulos, Nikos, Rout, Prasanna K., Watanabe, Kenji, Taniguchi, Takashi, Goswami, Srijit, Csonka, Szabolcs, Makk, Péter
Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin--orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Her
Externí odkaz:
http://arxiv.org/abs/2303.12622
Autor:
Kovács-Krausz, Zoltán, Tóvári, Endre, Nagy, Dániel, Márffy, Albin, Karpiak, Bogdan, Tajkov, Zoltán, Oroszlány, László, Koltai, János, Nemes-Incze, Péter, Dash, Saroj, Makk, Péter, Csonka, Szabolcs
Publikováno v:
Phys. Rev. B 2023, 107, 7, 075152
The layered material ZrTe$_5$ appears to exhibit several exotic behaviors which resulted in significant interest recently, although the exact properties are still highly debated. Among these we find a Dirac/Weyl semimetallic behavior, nontrivial spin
Externí odkaz:
http://arxiv.org/abs/2209.06797
Autor:
Sütő, Máté, Prok, Tamás, Makk, Péter, Kirti, Magdhi, Biasiol, Giorgio, Csonka, Szabolcs, Tóvári, Endre
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed quantized c
Externí odkaz:
http://arxiv.org/abs/2206.10984
Autor:
Szentpéteri, Bálint, Rickhaus, Peter, de Vries, Folkert K., Márffy, Albin, Fülöp, Bálint, Tóvári, Endre, Watanabe, Kenji, Taniguchi, Takashi, Kormányos, Andor, Csonka, Szabolcs, Makk, Péter
Publikováno v:
Nano Lett. 21, 20, 8777-8784 (2021)
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allo
Externí odkaz:
http://arxiv.org/abs/2108.07585
Autor:
Fülöp, Bálint, Márffy, Albin, Tóvári, Endre, Kedves, Máté, Zihlmann, Simon, Indolese, David, Kovács-Krausz, Zoltán, Watanabe, Kenji, Taniguchi, Takashi, Schönenberger, Christian, Kézsmárki, István, Makk, Péter, Csonka, Szabolcs
The interlayer coupling, which has a strong influence on the properties of van der Waals heterostructures, strongly depends on the interlayer distance. Although considerable theoretical interest has been demonstrated, experiments exploiting a variabl
Externí odkaz:
http://arxiv.org/abs/2103.14617